HUF76639S3S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: HUF76639S3S
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 180 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.027 Ohm
Paquete / Cubierta: TO263AB

Búsqueda de reemplazo de MOSFET HUF76639S3S

HUF76639S3S Datasheet (PDF)

..1. Size:218K fairchild semi
huf76639s3s.pdf

HUF76639P3, HUF76639S3SData Sheet December 200150A, 100V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceSOURCE DRAIN- rDS(ON) = 0.026, VGS = 10VDRAIN (FLANGE)GATE- rDS(ON) = 0.027, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEEle

..2. Size:844K onsemi
huf76639s3s.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

5.1. Size:244K fairchild semi
huf76639s f085.pdf

HUF76639S3ST_F085July 201250A, 100V, 0.026 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-263AB Ultra Low On-ResistanceDRAIN- rDS(ON) = 0.026, VGS = 10V (FLANGE) Simulation Models- Temperature Compensated PSPICE and SABER GATEElectrical ModelsSOURCE- Spice and SABER Thermal Impedance Models- www.fairchildsemi.com

6.1. Size:223K fairchild semi
huf76639p3-s3s.pdf

7.1. Size:369K fairchild semi
huf76633p3 f085.pdf

HUF76633P3_F085Data Sheet April 201238A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB Ultra Low On-Resistance- rDS(ON) = 0.035, VGS = 10VSOURCEDRAIN- rDS(ON) = 0.036, VGS = 5VGATE Simulation Models- Temperature Compensated PSPICE and SABER Electrical Models- Spice and SABER Thermal Impedance Model

7.2. Size:216K fairchild semi
huf76633s3st.pdf

HUF76633P3, HUF76633S3SData Sheet December 200138A, 100V, 0.036 Ohm, N-Channel, Logic Level UltraFET Power MOSFETPackagingFeaturesJEDEC TO-220AB JEDEC TO-263AB Ultra Low On-ResistanceDRAINSOURCE (FLANGE)- rDS(ON) = 0.035, VGS = 10VDRAINGATE- rDS(ON) = 0.036, VGS = 5V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEEl

7.3. Size:223K fairchild semi
huf76633p3-s3s.pdf

7.4. Size:843K cn vbsemi
huf76633p3.pdf

HUF76633P3www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.032 at VGS = 10 V45RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V40COMPLIANTDTO-220AB GSG D STop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C,

Otros transistores... HUF76609D3S , HUF76619D3 , HUF76619D3S , HUF76629D3 , HUF76629D3S , HUF76633P3 , HUF76633S3S , HUF76639P3 , P0903BDG , HUF76645P3 , HUF76645S3S , IRC120 , IRC130 , IRC140 , IRC150 , IRC220 , IRC224 .

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