2SJ580 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SJ580
   Código: JR
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(off)|ⓘ - Voltaje de corte de la puerta: 1 V
   Qgⓘ - Carga de la puerta: 9.8 nC
   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 70 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
   Paquete / Cubierta: PCP

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2SJ580 Datasheet (PDF)

..1. Size:29K sanyo
2sj580.pdf

Ordering number : ENN66692SJ580P-Channel Silicon MOSFET2SJ580Ultrahigh-Speed Switching ApplicationsFeaturesPackage Dimensions Low ON-resistanse.unit : mm Ultrahigh-speed switching.2062A 4V drive.[2SJ580]4.51.51.60.4 0.53 2 10.41.53.01 : Gate0.75 2 : Drain3 : SourceSANYO : PCP(Bottom view)SpecificationsAbsolute Maximum Ratings at Ta=

9.1. Size:33K sanyo
2sj589ls.pdf

Ordering number : ENN71482SJ589LSP-Channel Silicon MOSFET2SJ589LSDC / DC Converter ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm 4V drive. 2078C[2SJ589LS]10.0 4.53.22.80.91.2 1.20.75 0.71 2 31 : Gate2 : Drain3 : SourceSpecifications2.55 2.55Absolute Maximum Ratings at Ta=25CSANYO : TO-220FI(LS)Parameter Symbol Conditio

9.2. Size:42K sanyo
2sj583ls.pdf

Ordering number:ENN6409P-Channel Silicon MOSFET2SJ583LSUltrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2078B Micaless package facilitating mounting.[2SJ583LS]4.510.02.83.20.91.20.70.751 2 31 : Gate2 : Drain3 : Source2.55 2.55SANYO : TO-220FI-LSSpecificationsAbsolute

9.3. Size:42K sanyo
2sj585ls.pdf

Ordering number:ENN6412P-Channel Silicon MOSFET2SJ585LSUltrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2078B Micaless package facilitating mounting.[2SJ585LS]4.510.02.83.20.91.20.70.751 2 31 : Gate2 : Drain3 : Source2.55 2.55SANYO : TO-220FI-LSSpecificationsAbsolute

9.4. Size:42K sanyo
2sj584ls.pdf

Ordering number:ENN6410P-Channel Silicon MOSFET2SJ584LSUltrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance.unit:mm Ultrahigh-speed switching.2078B Micaless package facilitating mounting.[2SJ584LS]4.510.02.83.20.91.20.70.751 2 31 : Gate2 : Drain3 : Source2.55 2.55SANYO : TO-220FI-LSSpecificationsAbsolute

9.5. Size:37K nec
2sj581.pdf

PRELIMINARY PRODUCT INFORMATIONMOS FIELD EFFECT TRANSISTOR2SJ581SWITCHINGP-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATIONThe 2SJ581 is P-Channel DMOS Field Effect Transistor thatPART NUMBER PACKAGEfeatures a low on-resistance and excellent switching2SJ581 MP-10characteristics, designed for high current switching applicationssuch as DC to DC converter

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