SSF1006 Todos los transistores

 

SSF1006 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF1006

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 326 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 200 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 108 nC

Tiempo de elevación (tr): 24 nS

Conductancia de drenaje-sustrato (Cd): 672 pF

Resistencia drenaje-fuente RDS(on): 0.006 Ohm

Empaquetado / Estuche: TO220

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SSF1006 Datasheet (PDF)

1.1. ssf1006.pdf Size:672K _silikron

SSF1006
SSF1006

 SSF1006 Main Product Characteristics: VDSS 100V RDS(on) 4.6mΩ (typ.) ID 200A ① Mar ki ng a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body

1.2. ssf1006a.pdf Size:921K _silikron

SSF1006
SSF1006

SSF1006A Feathers: ID =200A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=4.7mΩ (Typ.) Fully characterized avalanche voltage and current Description: The SSF1006A is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electri

 1.3. ssf1006h.pdf Size:464K _silikron

SSF1006
SSF1006

 SSF1006H Main Product Characteristics: VDSS 100V RDS(on) 5mΩ (typ.) ID 200A ① Marking a nd p in TO-247 Schematic diagram Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

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