SSF1009 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSF1009
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 235 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 99 nS
Cossⓘ - Capacitancia de salida: 422 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de SSF1009 MOSFET
SSF1009 Datasheet (PDF)
ssf1009.pdf

SSF1009 Main Product Characteristics: VDSS 100V RDS(on) 7.2mohm(typ.) ID 100A Ma r k ing an d pin Sche ma ti c di agr a m TO220 Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body rec
ssf1006.pdf

SSF1006 Main Product Characteristics: VDSS 100V RDS(on) 4.6m (typ.) ID 200A Mar ki ng a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body
ssf1006a.pdf

SSF1006A Feathers: ID =200A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=4.7m Typ. Fully characterized avalanche voltage and current Description: The SSF1006A is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electri
ssf1007.pdf

SSF1007Main Product Characteristics: VDSS 100V RDS(on) 5.8mohmTypID 130A Features and Benefits: SSF1007 TOP View (TO220) Advanced trench MOSFET process technology Special designed for convertors and power controls Ultra low on-resistance 175 operating temperature High Avalanche capability and 100% tested Description: It utilizes the latest trench
Otros transistores... 2SJ589LS , 2N7002KB , 2N7002KG8 , SSF0115 , SSF1006 , SSF1006A , SSF1006H , SSF1007 , P60NF06 , SSF1010 , SSF1010A , SSF1016 , SSF1016A , SSF1016D , SSF1020 , SSF1020A , SSF1020D .
History: S85N042S | WMQ30P04T1 | AP0504GMT-HF | 2SJ602-S | IPP065N06LG | 2N6766 | STP8NM60N
History: S85N042S | WMQ30P04T1 | AP0504GMT-HF | 2SJ602-S | IPP065N06LG | 2N6766 | STP8NM60N



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