SSF1016 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSF1016
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 273 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 75 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 90 nC
Tiempo de subida (tr): 15.6 nS
Conductancia de drenaje-sustrato (Cd): 350 pF
Resistencia entre drenaje y fuente RDS(on): 0.016 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET SSF1016
SSF1016 Datasheet (PDF)
ssf1016.pdf
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SSF1016 Feathers: ID =75A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=16m (Max.) Fully characterized avalanche voltage and current Description: The SSF1016 is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical
ssf1016d.pdf
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SSF1016D Feathers: ID =60A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=16m (Max.) Fully characterized avalanche voltage and current Description: The SSF1016D is a new generation of high voltage and low current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical par
ssf1016a.pdf
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SSF1016AMain Product Characteristics: VDSS 100V RDS(on) 13.8mohm(typ.) ID 75A Marking and pin D2PAKSchematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover
ssf1010.pdf
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SSF1010Main Product Characteristics: VDSS 100V RDS(on) 9.5mohm(typ.)ID 100AMarking and pin TO220Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 17
ssf1010a.pdf
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SSF1010AMain Product Characteristics: VDSS 100V RDS(on) 9.5mohm(typ.)ID 100AMarking and pin D2PAKSchematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov
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