SSF1016A Todos los transistores

 

SSF1016A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF1016A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 273 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 75 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 92 nC

Tiempo de elevación (tr): 14 nS

Conductancia de drenaje-sustrato (Cd): 60 pF

Resistencia drenaje-fuente RDS(on): 0.016 Ohm

Empaquetado / Estuche: D2PAK

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SSF1016A Datasheet (PDF)

1.1. ssf1016a.pdf Size:544K _silikron

SSF1016A
SSF1016A

 SSF1016A  Main Product Characteristics: VDSS 100V RDS(on) 13.8mohm(typ.) ID 75A ① Marking and pin D2PAK Schematic diagram  Assignment  Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover

3.1. ssf1016.pdf Size:731K _silikron

SSF1016A
SSF1016A

SSF1016 Feathers: ID =75A  Advanced trench process technology BV=100V  avalanche energy, 100% test Rdson=16mΩ (Max.)  Fully characterized avalanche voltage and current Description: The SSF1016 is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical

3.2. ssf1016d.pdf Size:851K _silikron

SSF1016A
SSF1016A

SSF1016D Feathers: ID =60A Advanced trench process technology BV=100V avalanche energy, 100% test Rdson=16mΩ (Max.) Fully characterized avalanche voltage and current Description: The SSF1016D is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical par

Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 
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Recientemente añadidas las descripciónes de los transistores:

MOSFET: SIZ710DT | SIZ704DT | SIZ702DT | SIZ342DT | SIZ340DT | SIZ300DT | SIX3439K | SISS40DN | SISS23DN | SISA18DN | SISA18ADN | SISA14DN | SISA12DN | SISA12ADN | SISA10DN |

 

 

 
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