SSF1090A Todos los transistores

 

SSF1090A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF1090A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 41.7 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 15 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 36.5 nS

Conductancia de drenaje-sustrato (Cd): 72 pF

Resistencia drenaje-fuente RDS(on): 0.09 Ohm

Empaquetado / Estuche: D2PAK

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SSF1090A Datasheet (PDF)

1.1. ssf1090a.pdf Size:716K _silikron

SSF1090A
SSF1090A

 SSF1090A  Main Product Characteristics: VDSS 100V RDS(on) 72mΩ(typ) ID 15A ① Marking and pin D2PAK Schematic diagram  Assignment  Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

3.1. ssf1090d.pdf Size:436K _silikron

SSF1090A
SSF1090A

 SSF1090D Main Product Characteristics: VDSS 100V RDS(on) 60mΩ (typ.) ID 15A ① TO-252 (D-PAK) Marking and pi n Sc he mat ic d ia gram Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body

3.2. ssf1090.pdf Size:509K _silikron

SSF1090A
SSF1090A

SSF1090 Feathers: ID =15A  Advanced trench process technology BV=100V  Special designed for Convertors and power controls Rdson=0.06Ω (Typ.)  High density cell design for ultra low Rdson  Fully characterized Avalanche voltage and current  Avalanche Energy 100% test Description: The SSF1090 is a new generation of high voltage and low current N–Channel en

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