SSF1109 Todos los transistores

 ..1. Size:359K  silikron
 ssf1109.pdf

SSF1109 Main Product Characteristics VDSS 110V RDS(on) 6.7mohm(typ.) ID 130A Marking and pin TO220 Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 17

 9.1. Size:621K  silikron
 ssf1122d.pdf

SSF1122D Feathers ID =60A Advanced trench process technology BV=110V Ultra low Rdson Rdson=20m Typ. High avalanche energy, 100% test Fully characterized avalanche voltage and current Description The SSF1122D is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology increases the device re

 9.2. Size:468K  silikron
 ssf11ns60.pdf

SSF11NS60 Main Product Characteristics VDSS 600V RDS(on) 0.36 (typ.) ID 11A Marking a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits Feathers High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF11NS60 series MOSFETs is a new t

 9.3. Size:495K  silikron
 ssf11ns65uf.pdf

SSF11NS65UF Main Product Characteristics VDSS 650V RDS(on) 0.32 (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits Feathers High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF11NS65UF series MOSFETs is a new

 9.4. Size:438K  silikron
 ssf11ns60uf.pdf

SSF11NS60UF Main Product Characteristics VDSS 600V RDS(on) 0.32 (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits Feathers High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF11NS60UF series MOSFETs is a new

 9.5. Size:434K  silikron
 sssf11ns65uf.pdf

SSF11NS65UF Main Product Characteristics VDSS 650V RDS(on) 0.32 (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits Feathers High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF11NS65UF series MOSFETs is a new

 9.6. Size:379K  silikron
 ssf11ns65f.pdf

SSF11NS65F Main Product Characteristics VDSS 680V RDS(on) 0.36ohm(typ.) ID 11A Marking and pin TO220F Schematic diagram Assignment Features and Benefits Feathers High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF11NS65F series MOSFETs is a new technology. wh

 9.7. Size:373K  silikron
 ssf11ns65.pdf

SSF11NS65 Main Product Characteristics VDSS 680V RDS(on) 0.36ohm(typ.) ID 11A Marking and pin TO220 Schematic diagram Assignment Features and Benefits Feathers High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF11NS65 series MOSFETs is a new technology. which

 9.8. Size:453K  silikron
 ssf11ns70uf.pdf

SSF11NS70UF Main Product Characteristics VDSS 700V RDS(on) 0.4 (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits Feathers High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF11NS70UF series MOSFETs is a new

 9.9. Size:472K  silikron
 ssf11ns65ud.pdf

SSF11NS65UD Main Product Characteristics VDSS 650V RDS(on) 0.33 (typ.) ID 11A Marking and Pin TO-252 (DPAK) S che mati c Diag r am Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF11NS65UD series MOSFETs is a new techno

 9.10. Size:874K  silikron
 ssf1116a.pdf

SSF1116A Feathers ID =75A Advanced trench process technology BV=110V avalanche energy, 100% test Rdson=12m (Typ.) Fully characterized avalanche voltage and current Description The SSF1116A is a new generation of high voltage and low current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical par

 9.11. Size:479K  silikron
 ssf11ns65u.pdf

SSF11NS65U Main Product Characteristics VDSS 650V RDS(on) 0.32 (typ.) ID 11A Marking and pin TO-220 S che mati c di ag ra m Assignment Features and Benefits Feathers High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF11NS65U series MOSFETs is a new te

 9.12. Size:484K  silikron
 ssf11ns60d.pdf

SSF11NS60D Main Product Characteristics VDSS 600V RDS(on) 0.36 (typ.) ID 11A Ma r ki ng a nd pin TO-252 S che ma ti c di ag r a m Assignment Features and Benefits Feathers High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF11NS60D series MOSFETs is a

 9.13. Size:1098K  silikron
 ssf1116.pdf

SSF1116 Feathers ID =75A Advanced trench process technology BV=110V avalanche energy, 100% test Rdson=12m (Typ.) Fully characterized avalanche voltage and current Description The SSF1116 is a new generation of high voltage and low current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical param

 9.14. Size:434K  silikron
 ssf11ns70ug.pdf

SSF11NS70UG Main Product Characteristics VDSS 700V RDS(on) 0.39 (typ.) ID 11A Marking and Pin S che mati c Diag r am TO-251 (IPAK) Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF11NS70UG series MOSFETs is a new technol

 9.15. Size:621K  silikron
 ssf1122.pdf

SSF1122 Feathers ID =60A Advanced trench process technology BV=110V Ultra low Rdson Rdson=20m Typ High avalanche energy, 100% test Fully characterized avalanche voltage and current Description The SSF1122 is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology increases the device reli

 9.16. Size:447K  silikron
 ssf11ns60f.pdf

SSF11NS60F Main Product Characteristics VDSS 600V RDS(on) 0.36 (typ.) ID 11A Marking and p in TO220F Schematic diagram Assignment Features and Benefits Feathers High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF11NS60F series MOSFETs is a new technol