SSF1116A Todos los transistores

 

SSF1116A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF1116A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 272 W

Tensión drenaje-fuente (Vds): 110 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 75 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 110 nC

Tiempo de elevación (tr): 16 nS

Conductancia de drenaje-sustrato (Cd): 350 pF

Resistencia drenaje-fuente RDS(on): 0.016 Ohm

Empaquetado / Estuche: D2PAK

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SSF1116A Datasheet (PDF)

1.1. ssf1116a.pdf Size:874K _silikron

SSF1116A
SSF1116A

SSF1116A Feathers: ID =75A Advanced trench process technology BV=110V avalanche energy, 100% test Rdson=12mΩ (Typ.) Fully characterized avalanche voltage and current Description: The SSF1116A is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical par

3.1. ssf1116.pdf Size:1098K _silikron

SSF1116A
SSF1116A

SSF1116 Feathers: ID =75A Advanced trench process technology BV=110V avalanche energy, 100% test Rdson=12mΩ (Typ.) Fully characterized avalanche voltage and current Description: The SSF1116 is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical param

 5.1. sssf11ns65uf.pdf Size:434K _upd-mosfet

SSF1116A
SSF1116A

 SSF11NS65UF Main Product Characteristics: VDSS 650V RDS(on) 0.32Ω (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits: Feathers:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF11NS65UF series MOSFETs is a new

5.2. ssf11ns60uf.pdf Size:438K _silikron

SSF1116A
SSF1116A

 SSF11NS60UF Main Product Characteristics: VDSS 600V RDS(on) 0.32Ω (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits: Feathers:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF11NS60UF series MOSFETs is a new

 5.3. ssf11ns65uf.pdf Size:495K _silikron

SSF1116A
SSF1116A

 SSF11NS65UF Main Product Characteristics: VDSS 650V RDS(on) 0.32Ω (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits: Feathers:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF11NS65UF series MOSFETs is a new

5.4. ssf11ns60.pdf Size:468K _silikron

SSF1116A
SSF1116A

 SSF11NS60 Main Product Characteristics: VDSS 600V RDS(on) 0.36Ω (typ.) ID 11A Marking a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits: Feathers:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF11NS60 series MOSFETs is a new t

 5.5. ssf11ns60d.pdf Size:484K _silikron

SSF1116A
SSF1116A

 SSF11NS60D Main Product Characteristics: VDSS 600V RDS(on) 0.36Ω (typ.) ID 11A Ma r ki ng a nd pin TO-252 S che ma ti c di ag r a m Assignment Features and Benefits: Feathers:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF11NS60D series MOSFETs is a

5.6. ssf11ns65u.pdf Size:479K _silikron

SSF1116A
SSF1116A

 SSF11NS65U Main Product Characteristics: VDSS 650V RDS(on) 0.32Ω (typ.) ID 11A Marking and pin TO-220 S che mati c di ag ra m Assignment Features and Benefits: Feathers:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF11NS65U series MOSFETs is a new te

5.7. ssf11ns65.pdf Size:373K _silikron

SSF1116A
SSF1116A

 SSF11NS65  Main Product Characteristics: VDSS 680V RDS(on) 0.36ohm(typ.) ID 11A Marking and pin TO220 Schematic diagram  Assignment  Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65 series MOSFETs is a new technology. which

5.8. ssf11ns70uf.pdf Size:453K _silikron

SSF1116A
SSF1116A

 SSF11NS70UF Main Product Characteristics: VDSS 700V RDS(on) 0.4Ω (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits: Feathers:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF11NS70UF series MOSFETs is a new

5.9. ssf11ns60f.pdf Size:447K _silikron

SSF1116A
SSF1116A

 SSF11NS60F Main Product Characteristics: VDSS 600V RDS(on) 0.36Ω (typ.) ID 11A Marking and p in TO220F Schematic diagram Assignment Features and Benefits: Feathers:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF11NS60F series MOSFETs is a new technol

5.10. ssf1122d.pdf Size:621K _silikron

SSF1116A
SSF1116A

SSF1122D Feathers: ID =60A Advanced trench process technology BV=110V Ultra low Rdson Rdson=20mΩ(Typ.) High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF1122D is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device re

5.11. ssf11ns65f.pdf Size:379K _silikron

SSF1116A
SSF1116A

 SSF11NS65F  Main Product Characteristics: VDSS 680V RDS(on) 0.36ohm(typ.) ID 11A Marking and pin TO220F Schematic diagram  Assignment  Features and Benefits: Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF11NS65F series MOSFETs is a new technology. wh

5.12. ssf11ns70ug.pdf Size:434K _silikron

SSF1116A
SSF1116A

 SSF11NS70UG Main Product Characteristics VDSS 700V RDS(on) 0.39Ω (typ.) ID 11A Marking and Pin S che mati c Diag r am TO-251 (IPAK) Assignment Features and Benefits  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description The SSF11NS70UG series MOSFETs is a new technol

5.13. ssf11ns65ud.pdf Size:472K _silikron

SSF1116A
SSF1116A

 SSF11NS65UD Main Product Characteristics: VDSS 650V RDS(on) 0.33Ω (typ.) ID 11A Marking and Pin TO-252 (DPAK) S che mati c Diag r am Assignment Features and Benefits:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF11NS65UD series MOSFETs is a new techno

5.14. ssf1122.pdf Size:621K _silikron

SSF1116A
SSF1116A

SSF1122 Feathers: ID =60A Advanced trench process technology BV=110V Ultra low Rdson Rdson=20mΩ(Typ) High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF1122 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reli

5.15. ssf1109.pdf Size:359K _silikron

SSF1116A
SSF1116A

 SSF1109  Main Product Characteristics: VDSS 110V RDS(on) 6.7mohm(typ.) ID 130A Marking and pin TO220 Schematic diagram  Assignment  Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 17

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