SSF11NS60D Todos los transistores

 

SSF11NS60D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF11NS60D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 125 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 11 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 9.45 nS

Conductancia de drenaje-sustrato (Cd): 78.06 pF

Resistencia drenaje-fuente RDS(on): 0.41 Ohm

Empaquetado / Estuche: DPAK

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SSF11NS60D Datasheet (PDF)

1.1. ssf11ns60uf.pdf Size:438K _silikron

SSF11NS60D
SSF11NS60D

 SSF11NS60UF Main Product Characteristics: VDSS 600V RDS(on) 0.32Ω (typ.) ID 11A Marking and pin TO-220F S che mati c di ag ra m Assignment Features and Benefits: Feathers:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF11NS60UF series MOSFETs is a new

1.2. ssf11ns60.pdf Size:468K _silikron

SSF11NS60D
SSF11NS60D

 SSF11NS60 Main Product Characteristics: VDSS 600V RDS(on) 0.36Ω (typ.) ID 11A Marking a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits: Feathers:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF11NS60 series MOSFETs is a new t

 1.3. ssf11ns60d.pdf Size:484K _silikron

SSF11NS60D
SSF11NS60D

 SSF11NS60D Main Product Characteristics: VDSS 600V RDS(on) 0.36Ω (typ.) ID 11A Ma r ki ng a nd pin TO-252 S che ma ti c di ag r a m Assignment Features and Benefits: Feathers:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF11NS60D series MOSFETs is a

1.4. ssf11ns60f.pdf Size:447K _silikron

SSF11NS60D
SSF11NS60D

 SSF11NS60F Main Product Characteristics: VDSS 600V RDS(on) 0.36Ω (typ.) ID 11A Marking and p in TO220F Schematic diagram Assignment Features and Benefits: Feathers:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance Description: The SSF11NS60F series MOSFETs is a new technol

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