SSF1502G5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSF1502G5
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 12 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5.7 nS
Cossⓘ - Capacitancia de salida: 47 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
Paquete / Cubierta: SOT223
- Selección de transistores por parámetros
SSF1502G5 Datasheet (PDF)
ssf1502g5.pdf

SSF1502G5 Main Product Characteristics: VDSS 150V RDS(on) 0.14(typ) ID 6A Mar ki ng a nd p in Sc he mati c di a gram SOT223 Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body
ssf1502d.pdf

SSF1502DMain Product Characteristics: VDSS 170V(typ) RDS(on) 0.15(typ) ID 8AMarking and pin DPAKSchematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf1504d.pdf

SSF1504DMain Product Characteristics: VDSS 170V(typ) RDS(on) 0.3(typ) ID 6AMarking and pin DPAKSchematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf1526.pdf

SSF1526 Main Product Characteristics: VDSS 150V RDS(on) 22mohm(typ.) ID 65A Mar ki ng a nd p in TO220 Sche ma ti c di agr a m Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: IMW65R027M1H
History: IMW65R027M1H



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