SSF2300B Todos los transistores

 

SSF2300B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSF2300B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.2 V
   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 250 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: SOT23

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SSF2300B Datasheet (PDF)

 ..1. Size:302K  silikron
ssf2300b.pdf

SSF2300B
SSF2300B

SSF2300B DDESCRIPTION The SSF2300B uses advanced trench technology to provide excellent R , low gate charge and operation DS(ON)Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES V = 20V,I = 4.5A DS DR

 7.1. Size:342K  silikron
ssf2300.pdf

SSF2300B
SSF2300B

SSF2300DDESCRIPTION The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES VDS = 20V,ID = 2.4A RDS(ON)

 7.2. Size:401K  silikron
ssf2300a.pdf

SSF2300B
SSF2300B

SSF2300A DDESCRIPTION The SSF2300A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 20V,ID = 4.5A RDS(ON)

 7.3. Size:445K  goodark
gdssf2300.pdf

SSF2300B
SSF2300B

GDSSF2300 DDESCRIPTION The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES VDS = 20V,ID = 2.4A RDS(ON)

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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