SSF2301 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SSF2301
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 75 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET SSF2301

SSF2301 Datasheet (PDF)

..1. Size:566K silikron
ssf2301.pdf

SSF2301 Main Product Characteristics: DVDSS -20V G RDS(on) 60m (typ.) SID -3A Marking and pin SOT-23 Schematic diagram Assignme nt Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body re

0.1. Size:282K silikron
ssf2301b.pdf

SSF2301BDDESCRIPTION The SSF2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable Gfor use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -20V,ID = -2.8A RDS(ON)

0.2. Size:275K silikron
ssf2301a.pdf

SSF2301ADDESCRIPTION The SSF2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable Gfor use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -20V,ID = -4A RDS(ON)

8.1. Size:342K silikron
ssf2300.pdf

SSF2300DDESCRIPTION The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES VDS = 20V,ID = 2.4A RDS(ON)

8.2. Size:401K silikron
ssf2300a.pdf

SSF2300A DDESCRIPTION The SSF2300A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 20V,ID = 4.5A RDS(ON)

8.3. Size:302K silikron
ssf2306.pdf

SSF2306 DDESCRIPTION The SSF2306 uses advanced trench technology to provide excellent RDS(ON), Glow gate charge and operation with gate voltages as low as 2.5V. SGENERAL FEATURES Schematic diagram VDS = 30V,ID = 5A RDS(ON)

8.4. Size:302K silikron
ssf2300b.pdf

SSF2300B DDESCRIPTION The SSF2300B uses advanced trench technology to provide excellent R , low gate charge and operation DS(ON)Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES V = 20V,I = 4.5A DS DR

8.5. Size:317K silikron
ssf2307b.pdf

SSF2307BDDESCRIPTION The SSF2307B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable Gfor use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -20V,ID = -3A RDS(ON)

8.6. Size:323K silikron
ssf2305.pdf

SSF2305DDESCRIPTION The SSF2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.5V. This device is suitable Gfor use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -20V,ID = -3A RDS(ON)

8.7. Size:387K silikron
ssf2302.pdf

SSF2302DDESCRIPTION The SSF2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES VDS = 20V,ID = 2.4A D3RDS(ON)

8.8. Size:445K goodark
gdssf2300.pdf

GDSSF2300 DDESCRIPTION The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES VDS = 20V,ID = 2.4A RDS(ON)

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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