SSF2301A Todos los transistores

 

SSF2301A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF2301A

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.6 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 60 nS

Conductancia de drenaje-sustrato (Cd): 180 pF

Resistencia drenaje-fuente RDS(on): 0.065 Ohm

Empaquetado / Estuche: SOT23

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SSF2301A Datasheet (PDF)

1.1. ssf2301a.pdf Size:275K _silikron

SSF2301A
SSF2301A

SSF2301A D DESCRIPTION The SSF2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable G for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES ● VDS = -20V,ID = -4A RDS(ON) < 100mΩ @ VGS=-2.5V RDS(ON) < 65mΩ @ VGS=-4.5V ● High Power

3.1. ssf2301b.pdf Size:282K _silikron

SSF2301A
SSF2301A

SSF2301B D DESCRIPTION The SSF2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable G for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES ● VDS = -20V,ID = -2.8A RDS(ON) < 150mΩ @ VGS=-2.5V RDS(ON) < 100mΩ @ VGS=-4.5V ● High Pow

3.2. ssf2301.pdf Size:566K _silikron

SSF2301A
SSF2301A

 SSF2301 Main Product Characteristics: D VDSS -20V G RDS(on) 60mΩ (typ.) S ID -3A ① Marking and pin SOT-23 Schematic diagram Assignme nt Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body re

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