SSF2301B Todos los transistores

 ..1. Size:282K  silikron
 ssf2301b.pdf

SSF2301B D DESCRIPTION The SSF2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable G for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -20V,ID = -2.8A RDS(ON)

 7.1. Size:275K  silikron
 ssf2301a.pdf

SSF2301A D DESCRIPTION The SSF2301A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable G for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -20V,ID = -4A RDS(ON)

 7.2. Size:566K  silikron
 ssf2301.pdf

SSF2301 Main Product Characteristics D VDSS -20V G RDS(on) 60m (typ.) S ID -3A Marking and pin SOT-23 Schematic diagram Assignme nt Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body re

 8.1. Size:342K  silikron
 ssf2300.pdf

SSF2300 D DESCRIPTION The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 20V,ID = 2.4A RDS(ON)

 8.2. Size:401K  silikron
 ssf2300a.pdf

SSF2300A D DESCRIPTION The SSF2300A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 20V,ID = 4.5A RDS(ON)

 8.3. Size:302K  silikron
 ssf2306.pdf

SSF2306 D DESCRIPTION The SSF2306 uses advanced trench technology to provide excellent RDS(ON), G low gate charge and operation with gate voltages as low as 2.5V. S GENERAL FEATURES Schematic diagram VDS = 30V,ID = 5A RDS(ON)

 8.4. Size:302K  silikron
 ssf2300b.pdf

SSF2300B D DESCRIPTION The SSF2300B uses advanced trench technology to provide excellent R , low gate charge and operation DS(ON) G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES V = 20V,I = 4.5A DS D R

 8.5. Size:317K  silikron
 ssf2307b.pdf

SSF2307B D DESCRIPTION The SSF2307B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable G for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -20V,ID = -3A RDS(ON)

 8.6. Size:323K  silikron
 ssf2305.pdf

SSF2305 D DESCRIPTION The SSF2305 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.5V. This device is suitable G for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = -20V,ID = -3A RDS(ON)

 8.7. Size:387K  silikron
 ssf2302.pdf

SSF2302 D DESCRIPTION The SSF2302 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 20V,ID = 2.4A D 3 RDS(ON)

 8.8. Size:445K  goodark
 gdssf2300.pdf

GDSSF2300 D DESCRIPTION The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 20V,ID = 2.4A RDS(ON)