SSF2314 Todos los transistores

 

SSF2314 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF2314

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.25 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 8 V

Corriente continua de drenaje (Id): 4.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 18 nS

Conductancia de drenaje-sustrato (Cd): 300 pF

Resistencia drenaje-fuente RDS(on): 0.033 Ohm

Empaquetado / Estuche: SOT23

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SSF2314 Datasheet (PDF)

1.1. ssf2314.pdf Size:229K _silikron

SSF2314
SSF2314

SSF2314 D DESCRIPTION The SSF2314 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 0.65V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES ● V = 20V,I = 4.5A DS D R < 40mΩ @ V =2.5V DS(ON) GS R < 33mΩ @ V =4.5V

4.1. ssf2318e.pdf Size:341K _silikron

SSF2314
SSF2314

SSF2318E DESCRIPTION The SSF2318E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID =6.5A Schematic diagram RDS(ON) < 34mΩ @ VGS=1.8V RDS(ON) < 26mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.5V ESD Rating:2000V HBM ● High Power and current handing capability

4.2. ssf2312.pdf Size:281K _silikron

SSF2314
SSF2314

SSF2312 D DESCRIPTION The SSF2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES D ● VDS = 20V,ID = 4.5A 3 RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4

 4.3. ssf2316e.pdf Size:200K _silikron

SSF2314
SSF2314

SSF2316E GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 30mΩ @ VGS=3.1V RDS(ON) < 24mΩ @ VGS=4V Schematic diagram RDS(ON) < 23mΩ @ VGS=4.5V ESD Rating:2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Pin Assignment Application ●Battery protection ●Load swit

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