SSF2418E MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SSF2418E Main Product Characteristics: VDSS 20V RDS(on) 18mohm(typ.) ID 6A Mark ing an d pi n SOT23-6 Schema t ic diagr a m Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body re

SSF2418Ewww.VBsemi.twDual N-Channel MOSFET FEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.024 at VGS = 4.5 V Available6.0 100 % Rg Tested20RoHS*0.028 at VGS = 2.5 V Compliant to RoHS Directive 2002/95/EC5.0COMPLIANTTSOP6DDTop ViewS1 1 6 G1D1/D2 2 5 D1/D2G1 G2S2 G23

SSF2418EB DESCRIPTION The SSF2418EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.5V. This device is suitable for use as a load switch. It is ESD protected. Schematic diagram GENERAL FEATURES VDS = 20V,ID =6A RDS(ON)

SSF2418EBK 20V Dual N-Channel MOSFET DESCRIPTION The SSF2418EBK uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected. Schematic Diagram GENERAL FEATURES VDS = 20V,ID =6A RDS(ON)

SSF2418B 20V Dual N-Channel MOSFET DESCRIPTION The SSF2418B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected. Schematic Diagram GENERAL FEATURES VDS = 20V,ID =6A RDS(ON)