SSF2418EB Todos los transistores

 ..1. Size:294K  silikron
 ssf2418eb.pdf

SSF2418EB DESCRIPTION The SSF2418EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.5V. This device is suitable for use as a load switch. It is ESD protected. Schematic diagram GENERAL FEATURES VDS = 20V,ID =6A RDS(ON)

 0.1. Size:508K  goodark
 ssf2418ebk.pdf

SSF2418EBK 20V Dual N-Channel MOSFET DESCRIPTION The SSF2418EBK uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected. Schematic Diagram GENERAL FEATURES VDS = 20V,ID =6A RDS(ON)

 6.1. Size:382K  silikron
 ssf2418e.pdf

SSF2418E Main Product Characteristics VDSS 20V RDS(on) 18mohm(typ.) ID 6A Mark ing an d pi n SOT23-6 Schema t ic diagr a m Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body re

 6.2. Size:835K  cn vbsemi
 ssf2418e.pdf

SSF2418E www.VBsemi.tw Dual N-Channel MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.024 at VGS = 4.5 V Available 6.0 100 % Rg Tested 20 RoHS* 0.028 at VGS = 2.5 V Compliant to RoHS Directive 2002/95/EC 5.0 COMPLIANT TSOP6 D D Top View S1 1 6 G1 D1/D2 2 5 D1/D2 G1 G2 S2 G2 3