SSF2627 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSF2627
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.47 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 5.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 510 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.033 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de SSF2627 MOSFET
SSF2627 Datasheet (PDF)
ssf2627.pdf

SSF2627DDESCRIPTION The SSF2627 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has Gbeen optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). SSchematic diagram GENERAL FEATURES VDS = -20V,ID = -5.4A RDS(ON)
ssf26ns60a.pdf

SSF26NS60AMain Product Characteristics VDSS 600V RDS(on) 0.135(typ.) ID 20AMarking and Pin D2PAKSchematic DiagramAssignmentFeatures and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF26NS60A series MOSFETs is a new technology, which combines
ssf2637e.pdf

SSF2637E DESCRIPTION The SSF2637E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -0.5V. GENERAL FEATURES VDS = -20V,ID =-5.4A RDS(ON)
ssf2610e.pdf

SSF2610E DESCRIPTION The SSF2610E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 8A Schematic diagram RDS(ON)
Otros transistores... SSF2418E , SSF2418EB , SSF2429 , SSF2437E , SSF2449 , SSF2485 , SSF2610E , SSF2616E , 4N60 , SSF2637E , SSF2649 , SSF26NS60 , SSF26NS60A , SSF2701 , SSF2810EH2 , SSF2814E , SSF2814EH2 .



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