SSF2627 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSF2627
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 1.47 W
Tensión drenaje-fuente (Vds): 20 V
Tensión compuerta-fuente (Vgs): 10 V
Corriente continua de drenaje (Id): 5.4 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de elevación (tr): 25 nS
Conductancia de drenaje-sustrato (Cd): 510 pF
Resistencia drenaje-fuente RDS(on): 0.033 Ohm
Empaquetado / Estuche: SOP8
Búsqueda de reemplazo de MOSFET SSF2627
SSF2627 Datasheet (PDF)
1.1. ssf2627.pdf Size:458K _silikron
SSF2627 D DESCRIPTION The SSF2627 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has G been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). S Schematic diagram GENERAL FEATURES ●VDS = -20V,ID = -5.4A RDS(ON) < 48mΩ @ VGS=-2.5V RDS(ON) < 33mΩ @ VGS=-4.5V ● High Po
5.1. ssf2641s.pdf Size:432K _upd-mosfet
SSF2641S 20V P-Channel MOSFET D DESCRIPTION The SSF2641S uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has G been optimized for power management applications requiring a wide range of gave drive voltage ratings. S Schematic Diagram GENERAL FEATURES ●VDS = -20V,ID = -7.9A RDS(ON) < 70mΩ @ VGS=-2.5V RDS(ON) < 50mΩ @ VGS=-4.5V ●
5.2. ssf2610e.pdf Size:344K _silikron
SSF2610E DESCRIPTION The SSF2610E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 8A Schematic diagram RDS(ON) < 23mΩ @ VGS=1.8V RDS(ON) < 18mΩ @ VGS=2.5V RDS(ON) < 14mΩ @ VGS=4.5V ESD Rating:2000V HBM ● High Power and current handing capability
5.3. ssf26ns60.pdf Size:513K _silikron
SSF26NS60 Main Product Characteristics: VDSS 600V RDS(on) 0.135Ω(typ.) ID 20A Marking a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description: The SSF26NS60 series MOSFETs is a new technology, w
5.4. ssf26ns60a.pdf Size:310K _silikron
SSF26NS60A Main Product Characteristics VDSS 600V RDS(on) 0.135Ω(typ.) ID 20A Marking and Pin D2PAK Schematic Diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF26NS60A series MOSFETs is a new technology, which combines
5.5. ssf2616e.pdf Size:599K _silikron
SSF2616E DESCRIPTION The SSF2616E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A Schematic diagram RDS(ON) < 30mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 23mΩ @ VGS=4V RDS(ON) < 22mΩ @ VGS=4.5V ESD Rating:2000V HBM ● High Power and c
5.6. ssf2637e.pdf Size:304K _silikron
SSF2637E DESCRIPTION The SSF2637E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as -0.5V. GENERAL FEATURES ● VDS = -20V,ID =-5.4A RDS(ON) < 52mΩ @ VGS=-2.5V Schematic diagram RDS(ON) < 43mΩ @ VGS=-4.5V D D D D 8 7 6 5 ESD Rating:3000V HBM 2637E 4414 ● High Power and current handing capa
5.7. ssf2649.pdf Size:472K _silikron
SSF2649 Main Product Characteristics: D1 D2 VDSS -20V G1 G2 RDS(on) 49mohm(typ.) S1 S2 ID -7.9A Marking and pin SOP-8 Schematic diagram Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and re
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