SSF3028C1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SSF3028C1
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 28 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 21 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: TO252

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SSF3028C1 Datasheet (PDF)

..1. Size:468K silikron
ssf3028c1.pdf

SSF3028C1Main Product Characteristics:V 30VDSSR (on) 28mohm(typ.)DSI 21ADTO-252 Marking and pinSchematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching andgeneral purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 op

9.1. Size:331K silikron
ssf3018.pdf

SSF3018Feathers: ID=60A Advanced trench process technology BV=100V Special designed for Convertors and power controls Rdson=15mohm High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF3018 is a new generation of middle voltage and high current NChannel enhancement mode t

9.2. Size:339K silikron
ssf3018d.pdf

SSF3018D Feathers: ID=80A Advanced trench process technology BV=100V Special designed for Convertors and power controls Rdson=14mohm High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF3018D is a new generation of middle voltage and high current NChannel enhancement mod

9.3. Size:461K silikron
ssf3056c.pdf

SSF3056C Main Product Characteristics: NMOS PMOS D1 S1D1 S1NMOSNMOSD1 G1D1 G1VDSS 30V -30V D2 S2D2 S2PMOSPMOSD2 G2D2 G2RDS(on) 37mohm(typ.) 68mohm(typ.) ID 5A -4.5A DFN2X3-8L Schematic diagram Bottom View Features and Benefits: Advanced trench MOSFET process technology Special designed for buck-boost circuit, DSC, portable devices and gene

9.4. Size:439K silikron
ssf3002eg1.pdf

SSF3002EG1Main Product Characteristics:V 30VDSSR (on) 1ohm(typ.)DSI 0.5ADMarking and pinSOT23 Schematic diagramAssignmentFeatures andBenefits: Advanced trench MOSFET process technology Special designed for PWM, load switching andgeneral purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 1

9.5. Size:460K silikron
ssf3092g1.pdf

SSF3092G1Main Product Characteristics:V 30VDSSR (on) 92mohm(typ.)DSI 1.4A DMarking and pinSOT23 Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching andgeneral purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

9.6. Size:268K silikron
ssf3055.pdf

SSF3055 DDESCRIPTION The SSF3055 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This Gdevice is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES VDS = 25V,ID = 12A RDS(ON)

9.7. Size:722K silikron
ssf3051g7.pdf

SSF3051G7Main Product Characteristics: DVDSS -30V G RDS(on) 45mohm(typ.)SID -4A Marking and pin SOT23-6Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resistance with low gate charge Fast switching and rev

9.8. Size:384K silikron
ssf3036c.pdf

SSF3036C Main Product Characteristics: NMOS PMOS VDSS 30V -30V RDS(on) 32.4mohm 61.6mohm N-Channel Mosfet P-Channel Mosfet DFN 3x2-8L Schematic diagram ID 4A -3.6A Bottom View Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast

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