SSF3341 Todos los transistores

 

SSF3341 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSF3341
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 4.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 82 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
   Paquete / Cubierta: SOT23
     - Selección de transistores por parámetros

 

SSF3341 Datasheet (PDF)

 ..1. Size:536K  silikron
ssf3341.pdf pdf_icon

SSF3341

SSF3341 Main Product Characteristics: DVDSS -30V G RDS(on) 42m (typ.) SID -4.2A Marking and pin SOT-23 Schematic diagram Assignme nt Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body

 0.1. Size:381K  silikron
ssf3341l.pdf pdf_icon

SSF3341

SSF3341LDDESCRIPTION The SSF3341L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable Gfor use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDS = -30V,ID = -4.2A RDS(ON)

 9.1. Size:639K  silikron
ssf3324.pdf pdf_icon

SSF3341

SSF3324 Main Product Characteristics: VDSS 30V RDS(on) 26.5mohm(typ.) ID 5.8A Marking and pin SOT23 Schematic diagram Assignme nt Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body rec

 9.2. Size:564K  silikron
ssf3339.pdf pdf_icon

SSF3341

SSF3339 Main Product Characteristics: DVDSS -30V G RDS(on) 37m (typ.) SID -4.1A Marking and pin SOT-23 Schematic diagram Assignme nt Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body

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