SSF3420 Todos los transistores

 

SSF3420 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF3420

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.6 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 6.3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 4 nS

Conductancia de drenaje-sustrato (Cd): 150 pF

Resistencia drenaje-fuente RDS(on): 0.025 Ohm

Empaquetado / Estuche: SOT23-6

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SSF3420 Datasheet (PDF)

1.1. ssf3420.pdf Size:360K _silikron

SSF3420
SSF3420

SSF3420 D DESCRIPTION The SSF3420 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =6.3A RDS(ON) < 33mΩ @ VGS=4.5V RDS(ON) < 25mΩ @ VGS=10V ● High Power and current handing capability ● Lead free p

4.1. ssf3428.pdf Size:288K _silikron

SSF3420
SSF3420

SSF3428 DESCRIPTION The SSF3428 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =6A RDS(ON) < 51mΩ @ VGS=4.5V RDS(ON) < 34mΩ @ VGS=10V ● High Power and current handing capability ● Lead free product is a

 5.1. ssf3402.pdf Size:303K _silikron

SSF3420
SSF3420

SSF3402 D DESCRIPTION The SSF3402 uses advanced trench technology to provide excellent RDS(ON), G low gate charge and operation with gate voltages as low as 2.5V. S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID = 5A RDS(ON) < 30mΩ @ VGS=10V RDS(ON) < 48mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface

5.2. ssf3416.pdf Size:428K _silikron

SSF3420
SSF3420

SSF3416 D DESCRIPTION The SSF3416 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES ● VDS = 30V,ID =9A RDS(ON) < 30mΩ @ VGS=4.5V RDS(ON) < 18.5mΩ @ VGS=10V ● High Power and current handing capability ● Lead free p

Otros transistores... IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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