SSF3606 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SSF3606 DDESCRIPTION The SSF3606 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =15A RDS(ON)

SSF3605S Main Product Characteristics: DVDSS -30V G RDS(on) 5.1m(typ.) SID -15A SOP-8 Mar ki ng a nd p in Schematic diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body reco

SSF3604 DDESCRIPTION The SSF3604 uses advanced trench technology to Gprovide excellent RDS(ON) and low gate charge .This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =18.5A RDS(ON)

SSF3624 DESCRIPTION The SSF3624 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES VDS = 30V,ID =6A RDS(ON)

SSF3612 DDESCRIPTION The SSF3612 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =11.6A RDS(ON)

SSF3616 DDESCRIPTION The SSF3616 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =9A RDS(ON)

SSF3617 DDESCRIPTION The SSF3617 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS =-30V,ID =-10A RDS(ON)

SSF3637S DDESCRIPTION The SSF3637S uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS =- 30V,ID =-10A R

SSF3610 DDESCRIPTION The SSF3610 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =11A RDS(ON)

SSF3620 DESCRIPTION The SSF3620 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES VDS = 30V,ID =7A RDS(ON)

SSF3626 DESCRIPTION The SSF3626 uses advanced trench technology to provide excellent R DS(ON)and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES VDS = 30V,ID =6.9A R

SSF3637D1D2DESCRIPTION The SSF3637 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has G1 G2been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). S1 S2Schematic diagram GENERAL FEATURES VDS = -30V,ID = -5A RDS(ON)

SSF3615 DDESCRIPTION The SSF3615 uses advanced trench technology to provide excellent RDS(ON) Gand low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS =- 30V,ID =-10A RDS(ON)

SSF3641 DESCRIPTION The SSF3641 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES VDS =- 30V,ID =-5A RDS(ON)

SSF3639CDESCRIPTION The SSF3639C uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications. P-channel N-channel Schematic diagram GENERAL FEATURES N-Channel VDS = 30V,ID = 6.3A RDS(ON)

SSF3610E Main Product Characteristics: VDSS 25 V SSF3610ESSF3610E RDS(on) 6.8 m(typ.) ID 18A Marking and pin Sc hemat ic d ia gr am SOP-8 A s sign ment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching an

SSF3611EMain Product Characteristics: VDSS -30 V RDS(on) 10.6 m(typ.) ID -12AMarking and pin SOP-8Schematic diagramAssignmentFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

SSF3612E 25V N-Channel MOSFET DESCRIPTION The SSF3612E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.4V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Schem