SSF3639C Todos los transistores

 ..1. Size:339K  silikron
 ssf3639c.pdf

SSF3639C DESCRIPTION The SSF3639C uses advanced trench technology MOSFET to provide excellent RDS(ON) and low gate charge. The complementary MOSFET may be used in power inverters, and other applications. P-channel N-channel Schematic diagram GENERAL FEATURES N-Channel VDS = 30V,ID = 6.3A RDS(ON)

 8.1. Size:311K  silikron
 ssf3637s.pdf

SSF3637S D DESCRIPTION The SSF3637S uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS =- 30V,ID =-10A R

 8.2. Size:503K  silikron
 ssf3637.pdf

SSF3637 D1 D2 DESCRIPTION The SSF3637 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has G1 G2 been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). S1 S2 Schematic diagram GENERAL FEATURES VDS = -30V,ID = -5A RDS(ON)

 9.1. Size:508K  silikron
 ssf3624.pdf

SSF3624 DESCRIPTION The SSF3624 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES VDS = 30V,ID =6A RDS(ON)

 9.2. Size:472K  silikron
 ssf3605s.pdf

SSF3605S Main Product Characteristics D VDSS -30V G RDS(on) 5.1m (typ.) S ID -15A SOP-8 Mar ki ng a nd p in Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body reco

 9.3. Size:442K  silikron
 ssf3612.pdf

SSF3612 D DESCRIPTION The SSF3612 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =11.6A RDS(ON)

 9.4. Size:587K  silikron
 ssf3616.pdf

SSF3616 D DESCRIPTION The SSF3616 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =9A RDS(ON)

 9.5. Size:327K  silikron
 ssf3617.pdf

SSF3617 D DESCRIPTION The SSF3617 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS =-30V,ID =-10A RDS(ON)

 9.6. Size:505K  silikron
 ssf3606.pdf

SSF3606 D DESCRIPTION The SSF3606 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =15A RDS(ON)

 9.7. Size:496K  silikron
 ssf3610.pdf

SSF3610 D DESCRIPTION The SSF3610 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =11A RDS(ON)

 9.8. Size:457K  silikron
 ssf3620.pdf

SSF3620 DESCRIPTION The SSF3620 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES VDS = 30V,ID =7A RDS(ON)

 9.9. Size:394K  silikron
 ssf3604.pdf

SSF3604 D DESCRIPTION The SSF3604 uses advanced trench technology to G provide excellent RDS(ON) and low gate charge .This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. S Schematic diagram GENERAL FEATURES VDS = 30V,ID =18.5A RDS(ON)

 9.10. Size:323K  silikron
 ssf3626.pdf

SSF3626 DESCRIPTION The SSF3626 uses advanced trench technology to provide excellent R DS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES VDS = 30V,ID =6.9A R

 9.11. Size:421K  silikron
 ssf3615.pdf

SSF3615 D DESCRIPTION The SSF3615 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES VDS =- 30V,ID =-10A RDS(ON)

 9.12. Size:498K  silikron
 ssf3641.pdf

SSF3641 DESCRIPTION The SSF3641 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic diagram GENERAL FEATURES VDS =- 30V,ID =-5A RDS(ON)

 9.13. Size:578K  silikron
 ssf3610e.pdf

SSF3610E Main Product Characteristics VDSS 25 V SSF3610E SSF3610E RDS(on) 6.8 m (typ.) ID 18A Marking and pin Sc hemat ic d ia gr am SOP-8 A s sign ment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching an

 9.14. Size:324K  silikron
 ssf3611e.pdf

SSF3611E Main Product Characteristics VDSS -30 V RDS(on) 10.6 m (typ.) ID -12A Marking and pin SOP-8 Schematic diagram Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 9.15. Size:453K  goodark
 ssf3612e.pdf

SSF3612E 25V N-Channel MOSFET DESCRIPTION The SSF3612E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.4V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Schem