SSF4032CH3 Todos los transistores

 

SSF4032CH3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSF4032CH3
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 2.1 W
   Voltaje máximo drenador - fuente |Vds|: 40 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 6(5) A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
   Resistencia entre drenaje y fuente RDS(on): 0.032(0.042) Ohm
   Paquete / Cubierta: SOP8

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SSF4032CH3 Datasheet (PDF)

 ..1. Size:257K  silikron
ssf4032ch3.pdf

SSF4032CH3
SSF4032CH3

SSF4032CH3Main Product Characteristics:NMOS PMOSVDSS 40V -40VRDS(on) 16mohm(typ.) 25mohm(typ.)ID 6A -4.5ASOP-8 Schematic diagramBottom View Features and Benefits: Advanced trench MOSFET process technology Special designed for buck-boost circuit, DSC, portable devices and general purpose applications Ultra low on-resistance with low gate charge 1

 8.1. Size:495K  silikron
ssf4031c1.pdf

SSF4032CH3
SSF4032CH3

SSF4031C1Main Product Characteristics:V -40VDSSR (on) 24mohm(typ.)DSI -30ADTO-252 Marking and pinSchematic diagramAssignmentFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching andgeneral purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 100%Ava

 9.1. Size:397K  silikron
ssf4015.pdf

SSF4032CH3
SSF4032CH3

SSF4015 Main Product Characteristics: DVDSS -40V SSF3612DSSF3612DSSF4015SSF4035 G RDS(on) 11m (typ.) ID -40A STO-252 (D-PAK) Marking a nd p in S che mati c di agra m Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low g

 9.2. Size:512K  silikron
ssf4004s.pdf

SSF4032CH3
SSF4032CH3

SSF4004S Main Product Characteristics VDSS 40V RDS(on) 2.3m (typ.) ID 180A Marking and Pi n TO-220 Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 9.3. Size:1038K  silikron
ssf4004.pdf

SSF4032CH3
SSF4032CH3

SSF4004 Feathers: ID=200A Advanced trench process technology BV=40V Special designed for Convertors and power controls Rdson=4 mmax. High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF4004 is a new generation of high voltage and low current NChannel en

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