SSS1004A7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SSS1004A7
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 375 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 180 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 141 nS
   Cossⓘ - Capacitancia de salida: 657 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
   Paquete / Cubierta: TO263-7L

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SSS1004A7 Datasheet (PDF)

..1. Size:362K silikron
sss1004a7.pdf

SSS1004A7 Main Product Characteristics VDSS 100V 1, Gate RDS(on) 3.0m (typ.) 2~3,5~7 Source 4,8 Drain ID 180A Schematic diagram TO-263-7L Pin Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and re

7.1. Size:482K silikron
sss1004.pdf

SSS1004 Main Product Characteristics VDSS 100V RDS(on) 3.7m (typ.) ID 180A Marking a nd p in TO-220 Schematic diagram Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 17

9.1. Size:504K samsung
sss10n60a.pdf

Advanced Power MOSFETFEATURESBVDSS = 600 V Avalanche Rugged TechnologyRDS(on) = 0.8 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5.1 A Improved Gate Charge Extended Safe Operating AreaA Lower Leakage Current : 25 (Max.) @ VDS = 600V Low RDS(ON) : 0.646 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

9.2. Size:14125K shenzhen
sss10n60.pdf

Shenzhen Tuofeng Semiconductor Technology Co., LtdSSS10N60N N-CHANNEL MOSFET Package MAIN CHARACTERISTICS 10.0 AID600 V VDSS Rdson 0.75 @Vgs=10V34 nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS

9.3. Size:4141K cn tuofeng
sss10n60.pdf

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO. LTDN-CHANNEL MOSFETSSS10N60 Package MAIN CHARACTERISTICS 10.0 AID600 V VDSS 0.75 Rdson@Vgs=10V34 nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge UPS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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