SSF6008 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF6008

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 181 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 84 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15.6 nS

Cossⓘ - Capacitancia de salida: 300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm

Encapsulados: TO220

 Búsqueda de reemplazo de SSF6008 MOSFET

- Selecciónⓘ de transistores por parámetros

 

SSF6008 datasheet

 ..1. Size:597K  silikron
ssf6008.pdf pdf_icon

SSF6008

SSF6008 Feathers ID =84A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=8m Fully characterized avalanche voltage and current Description The SSF6008 is a new generation of high voltage and low current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter

 8.1. Size:503K  silikron
ssf6007.pdf pdf_icon

SSF6008

SSF6007 Main Product Characteristics VDSS -50V 6007 6007 RDS(on) 2.1ohm(typ.) ID -130mA Marking and p in Schematic dia gram SOT-23 Assignment Features and Benefits Advanced MOSFET process technology Special designed for Line current interrupter in telephone sets, Relay, high speed and line transformer drivers and general purpose applications Ultra l

 8.2. Size:339K  silikron
ssf6005.pdf pdf_icon

SSF6008

SSF6005 Main Product Characteristics VDSS 60V RDS(on) 2.7m (typ.) ID 160A Marking and pin TO-220 Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 o

 8.3. Size:370K  goodark
ssf6007.pdf pdf_icon

SSF6008

SSF6007 50V P-Channel MOSFET Main Product Characteristics VDSS -50V 6007 6007 RDS(on) 2.1ohm(typ.) ID -130mA Mark in g a nd P i n Sc hema t ic D i a gra m SOT-23 Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for Line current interrupter in telephone sets, Relay, high speed and line transformer drivers and genera

Otros transistores... SSS1004, SSS1004A7, SSS1206, SSS1206H, SSS1510, SSF11NS65UF, SSF6005, SSF6007, TK10A60D, SSF6010, SSF6010A, SSF6014, SSF6014A, SSF6014D, SSF6014J7, SSF6014J8, SSF6025