SSF6010A Todos los transistores

 

SSF6010A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSF6010A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 144 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14.2 nS
   Cossⓘ - Capacitancia de salida: 190 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: D2PAK
     - Selección de transistores por parámetros

 

SSF6010A Datasheet (PDF)

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SSF6010A

SSF6010A Feathers: ID =75A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=8m (typ.) Fully characterized avalanche voltage and current Description: The SSF6010A is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electric

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SSF6010A

SSF6010 Feathers: ID =75A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=8m (typ.) Fully characterized avalanche voltage and current Description: The SSF6010 is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical

 7.2. Size:1096K  goodark
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SSF6010A

SSF6010G 60V N-Channel MOSFET Main Product Characteristics VDSS 60V RDS(on) 8.3m (typ.) ID 64A TO-251 Mark in g a nd P i n Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and

 8.1. Size:259K  silikron
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SSF6010A

SSF6014J7Main Product Characteristics: VDSS 60V RDS(on) 11m (typ.) ID 40APQFN 5x6Pin AssignmentSchematic DiagramFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 ope

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History: IRC840PBF | PV563BA | STF34N65M5 | IRFM1310ST | IPS80R900P7 | AP2317GN-HF | SSPL1090

 

 
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