SSF6010A Todos los transistores

 ..1. Size:443K  silikron
 ssf6010a.pdf

SSF6010A Feathers ID =75A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=8m (typ.) Fully characterized avalanche voltage and current Description The SSF6010A is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electric

 7.1. Size:605K  silikron
 ssf6010.pdf

SSF6010 Feathers ID =75A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=8m (typ.) Fully characterized avalanche voltage and current Description The SSF6010 is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical

 7.2. Size:1096K  goodark
 ssf6010g.pdf

SSF6010G 60V N-Channel MOSFET Main Product Characteristics VDSS 60V RDS(on) 8.3m (typ.) ID 64A TO-251 Mark in g a nd P i n Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and

 8.1. Size:259K  silikron
 ssf6014j7.pdf

SSF6014J7 Main Product Characteristics VDSS 60V RDS(on) 11m (typ.) ID 40A PQFN 5x6 Pin Assignment Schematic Diagram Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 ope

 8.2. Size:688K  silikron
 ssf6014d.pdf

SSF6014D Main Product Characteristics VDSS 60V RDS(on) 12m (typ.) ID 60A DPAK Ma rk in g an d pi n Sc h ema t ic diag r am Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body rec

 8.3. Size:481K  silikron
 ssf6014a.pdf

SSF6014A Feathers ID =60A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=14m max. Fully characterized avalanche voltage and current Description The SSF6014A is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and ele

 8.4. Size:807K  silikron
 ssf6014j8.pdf

SSF6014J8 Main Product Characteristics V 60V DSS R (on) 16m (typ.) DS I 22A D PinAssignment Schematic diagram DFN3.3x3.3 Bottom view Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 8.5. Size:654K  silikron
 ssf6014.pdf

SSF6014 Feathers ID =60A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=14m max. Fully characterized avalanche voltage and current Description The SSF6014 is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and elect