SSF6014J7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SSF6014J7
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 115 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 40 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
   Carga de la puerta (Qg): 45 nC
   Tiempo de subida (tr): 14 nS
   Conductancia de drenaje-sustrato (Cd): 190 pF
   Resistencia entre drenaje y fuente RDS(on): 0.009 Ohm
   Paquete / Cubierta: PQFN5X6

Búsqueda de reemplazo de MOSFET SSF6014J7

SSF6014J7 Datasheet (PDF)

..1. Size:259K silikron
ssf6014j7.pdf

SSF6014J7Main Product Characteristics: VDSS 60V RDS(on) 11m (typ.) ID 40APQFN 5x6Pin AssignmentSchematic DiagramFeatures and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 ope

6.1. Size:807K silikron
ssf6014j8.pdf

SSF6014J8Main Product Characteristics:V 60VDSSR (on) 16m (typ.)DSI 22ADPinAssignment Schematic diagramDFN3.3x3.3Bottom viewFeatures and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching andgeneral purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

7.1. Size:688K silikron
ssf6014d.pdf

SSF6014D Main Product Characteristics: VDSS 60V RDS(on) 12m(typ.) ID 60A DPAK Ma rk in g an d pi n Sc h ema t ic diag r am Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body rec

7.2. Size:481K silikron
ssf6014a.pdf

SSF6014A Feathers: ID =60A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=14mmax. Fully characterized avalanche voltage and current Description: The SSF6014A is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and ele

7.3. Size:654K silikron
ssf6014.pdf

SSF6014 Feathers: ID =60A Advanced trench process technology BV=60V avalanche energy, 100% test Rdson=14mmax. Fully characterized avalanche voltage and current Description: The SSF6014 is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and elect

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