SSF6808 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSF6808
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 181 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 68 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 84 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15.6 nS
Cossⓘ - Capacitancia de salida: 300 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de SSF6808 MOSFET
SSF6808 Datasheet (PDF)
ssf6808.pdf

SSF6808 Feathers: ID =84A Advanced trench process technology BV=68V Ultra low Rdson, typical 6mohm Rdson=8mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF6808 is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device
ssf6808d.pdf

SSF6808D Main Product Characteristics: VDSS 68V RDS(on) 6.1mohm(typ.) ID 79A Mar ki ng a nd p in DPAK Sche ma ti c di agr a m Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body
ssf6808a.pdf

SSF6808A Feathers: ID =84A Advanced trench process technology BV=68V Ultra low Rdson, typical 5mohm Rdson=8mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF6808A is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases t
ssf6814.pdf

SSF6814 Feathers: ID =60A Advanced trench process technology BV=68V avalanche energy, 100% test Rdson=14mmax. Fully characterized avalanche voltage and current Description: The SSF6814 is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and elect
Otros transistores... SSF6014J8 , SSF6025 , SSF6072G5 , SSF6092G1 , SSF6114 , SSF6401 , SSF6646 , SSF6670 , IRFB31N20D , SSF6808A , SSF6808D , SSF6814 , SSF6816 , SSF6908 , SSF6N40D , SSF6N60G , SSF6N70G .



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