SSF6808 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF6808

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 181 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 68 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 84 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15.6 nS

Cossⓘ - Capacitancia de salida: 300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm

Encapsulados: TO220

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SSF6808 datasheet

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 ssf6808.pdf pdf_icon

SSF6808

SSF6808 Feathers ID =84A Advanced trench process technology BV=68V Ultra low Rdson, typical 6mohm Rdson=8mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Description The SSF6808 is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology increases the device

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 ssf6808d.pdf pdf_icon

SSF6808

SSF6808D Main Product Characteristics VDSS 68V RDS(on) 6.1mohm(typ.) ID 79A Mar ki ng a nd p in DPAK Sche ma ti c di agr a m Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body

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 ssf6808a.pdf pdf_icon

SSF6808

SSF6808A Feathers ID =84A Advanced trench process technology BV=68V Ultra low Rdson, typical 5mohm Rdson=8mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Description The SSF6808A is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology increases t

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 ssf6814.pdf pdf_icon

SSF6808

SSF6814 Feathers ID =60A Advanced trench process technology BV=68V avalanche energy, 100% test Rdson=14m max. Fully characterized avalanche voltage and current Description The SSF6814 is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and elect

MOSTRAR MÁS

Otros transistores... SSF6014J8, SSF6025, SSF6072G5, SSF6092G1, SSF6114, SSF6401, SSF6646, SSF6670, IRF2807, SSF6808A, SSF6808D, SSF6814, SSF6816, SSF6908, SSF6N40D, SSF6N60G, SSF6N70G