SSF6808A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSF6808A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 180 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 68 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 84 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15.6 nS
Cossⓘ - Capacitancia de salida: 300 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
Encapsulados: D2PAK
Búsqueda de reemplazo de SSF6808A MOSFET
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SSF6808A datasheet
ssf6808a.pdf
SSF6808A Feathers ID =84A Advanced trench process technology BV=68V Ultra low Rdson, typical 5mohm Rdson=8mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Description The SSF6808A is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology increases t
ssf6808.pdf
SSF6808 Feathers ID =84A Advanced trench process technology BV=68V Ultra low Rdson, typical 6mohm Rdson=8mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Description The SSF6808 is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology increases the device
ssf6808d.pdf
SSF6808D Main Product Characteristics VDSS 68V RDS(on) 6.1mohm(typ.) ID 79A Mar ki ng a nd p in DPAK Sche ma ti c di agr a m Assignment Features and Benefits Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body
ssf6814.pdf
SSF6814 Feathers ID =60A Advanced trench process technology BV=68V avalanche energy, 100% test Rdson=14m max. Fully characterized avalanche voltage and current Description The SSF6814 is a new generation of middle voltage and high current N Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and elect
Otros transistores... SSF6025, SSF6072G5, SSF6092G1, SSF6114, SSF6401, SSF6646, SSF6670, SSF6808, STF13NM60N, SSF6808D, SSF6814, SSF6816, SSF6908, SSF6N40D, SSF6N60G, SSF6N70G, SSF6N70GM
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