SSF6808D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSF6808D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 114 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 68 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 79 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 96.4 nS
Cossⓘ - Capacitancia de salida: 391 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
Paquete / Cubierta: DPAK
Búsqueda de reemplazo de SSF6808D MOSFET
SSF6808D Datasheet (PDF)
ssf6808d.pdf

SSF6808D Main Product Characteristics: VDSS 68V RDS(on) 6.1mohm(typ.) ID 79A Mar ki ng a nd p in DPAK Sche ma ti c di agr a m Assignment Features and Benefits: Advanced trench MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body
ssf6808.pdf

SSF6808 Feathers: ID =84A Advanced trench process technology BV=68V Ultra low Rdson, typical 6mohm Rdson=8mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF6808 is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device
ssf6808a.pdf

SSF6808A Feathers: ID =84A Advanced trench process technology BV=68V Ultra low Rdson, typical 5mohm Rdson=8mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF6808A is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases t
ssf6814.pdf

SSF6814 Feathers: ID =60A Advanced trench process technology BV=68V avalanche energy, 100% test Rdson=14mmax. Fully characterized avalanche voltage and current Description: The SSF6814 is a new generation of middle voltage and high current NChannel enhancement mode trench power MOSFET. This new technology increases the device reliability and elect
Otros transistores... SSF6072G5 , SSF6092G1 , SSF6114 , SSF6401 , SSF6646 , SSF6670 , SSF6808 , SSF6808A , AON6380 , SSF6814 , SSF6816 , SSF6908 , SSF6N40D , SSF6N60G , SSF6N70G , SSF6N70GM , SSF6N80A6 .
History: RF1S25N06 | FDMS5360LF085 | IRFB9N60APBF | IRF6648PBF | IRF7103PBF | SFP048N150C3 | SIRA18ADP
History: RF1S25N06 | FDMS5360LF085 | IRFB9N60APBF | IRF6648PBF | IRF7103PBF | SFP048N150C3 | SIRA18ADP



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