SSF6N40D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSF6N40D
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 50 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua
de drenaje: 5.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 18 nS
Cossⓘ - Capacitancia de salida: 79 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de SSF6N40D MOSFET
- Selecciónⓘ de transistores por parámetros
SSF6N40D datasheet
..1. Size:555K silikron
ssf6n40d.pdf 
SSF6N40D Main Product Characteristics VDSS 400V RDS(on) 0.85 (typ.) ID 5.5A TO-252 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover
9.1. Size:263K 1
ssf6n80a.pdf
SSF6N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 2.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area TO-3PF Lower Leakage Current 25 A (Max.) @ VDS = 800V Low RDS(ON) 1.472 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha
9.4. Size:532K silikron
ssf6n80f.pdf
SSF6N80F Main Product Characteristics VDSS 800V RDS(on) 2.2 (typ.) ID 5.5A Marking a nd p in Sche ma ti c di agr a m TO220F Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body reco
9.6. Size:443K silikron
ssf6n60g.pdf
SSF6N60G Main Product Characteristics VDSS 600V RDS(on) 1.32 (typ.) ID 6A TO-251 Marking a nd p in Sche ma ti c di agr a m Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
9.7. Size:407K silikron
ssf6ns70ugx.pdf
SSF6NS70UGX Main Product Characteristics VDSS 700V RDS(on) 1.08 (typ.) ID 6A IPAK-NX Marking and Pi n Schematic Diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF6NS70UGX series MOSFETs is a new technology, whi
9.8. Size:411K silikron
ssf6n70gm.pdf
SSF6N70GM Main Product Characteristics VDSS 700V RDS(on) 1.49 (typ.) ID 6A IPAKM-S2 Marking and p in S che ma ti c di ag ra m (Details in page6) Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and
9.9. Size:451K silikron
ssf6n70g.pdf
SSF6N70G Main Product Characteristics VDSS 700V RDS(on) 1.49 (typ.) ID 6A TO-251 Marking and p in S che ma ti c di ag ra m Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
9.10. Size:457K silikron
ssf6ns70ug.pdf
SSF6NS70UG Main Product Characteristics VDSS 700V RDS(on) 0.95 (typ.) ID 6A TO-251 (IPAK) Marking and p in Schematic diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF6NS70UG series MOSFETs is a new technology,
9.11. Size:478K silikron
ssf6n80g.pdf
SSF6N80G Main Product Characteristics VDSS 800V RDS(on) 2.35 (typ.) ID 5.5A Marking and p in TO-251 (IPAK) Schematic diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recov
9.12. Size:453K silikron
ssf6ns65uf.pdf
SSF6NS65UF Main Product Characteristics VDSS 650V RDS(on) 0.78 (typ.) ID 6A Marking and pin TO-220F Schematic diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF6NS65UF series MOSFETs is a new technology, whic
9.13. Size:465K silikron
ssf6ns70ud.pdf
SSF6NS70UD Main Product Characteristics VDSS 700V RDS(on) 0.95 (typ.) ID 6A TO-252 (DPAK) Marking and p in Schematic diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF6NS70UD series MOSFETs is a new technology,
9.14. Size:450K silikron
ssf6ns70ugs.pdf
SSF6NS70UGS Main Product Characteristics VDSS 700V RDS(on) 1.1 (typ.) ID 6A TO-251S Marking and p in Schematic diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF6NS70UGS series MOSFETs is a new technology, whic
9.15. Size:543K silikron
ssf6ns70g-d-f.pdf
SSF6NS70G/D/F Main Product Characteristics VDSS 700V RDS(on) 1.2 (typ.) ID 5.2A 251 TO-252 TO- TO-220F Schematic diagram SSF6NS70G SSF6NS70D SSF6NS70F Features and Benefits Feathers High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Description The SSF6NS70G/D/F
Otros transistores... SSF6646, SSF6670, SSF6808, SSF6808A, SSF6808D, SSF6814, SSF6816, SSF6908, 75N75, SSF6N60G, SSF6N70G, SSF6N70GM, SSF6N80A6, SSF6N80F, SSF6N80G, SSF6NS65UF, SSF6NS70G
