SSF7504 Todos los transistores

 

SSF7504 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF7504

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 370 W

Tensión drenaje-fuente (Vds): 80 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 220 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 140 nC

Tiempo de elevación (tr): 35 nS

Conductancia de drenaje-sustrato (Cd): 600 pF

Resistencia drenaje-fuente RDS(on): 0.004 Ohm

Empaquetado / Estuche: TO220

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SSF7504 Datasheet (PDF)

1.1. ssf7504.pdf Size:426K _silikron

SSF7504
SSF7504

SSF7504 Feathers: ID=220A Advanced trench process technology BV=75V Special designed for Convertors and power controls Rdson=2.7mΩ(typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF7504 is a new generation of middle voltage and high current N–Channel enhancemen

1.2. ssf7504a7.pdf Size:470K _silikron

SSF7504
SSF7504

 SSF7504A7 Main Product Characteristics: VDSS 75V 1, Gate RDS(on) 2.5mΩ(typ.) 2~3,5~7 Source 4,8 Drain ID 220A ① Schematic Diagram TO-263-7L Pin Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching

 1.3. ssf7504a.pdf Size:396K _silikron

SSF7504
SSF7504

SSF7504A Feathers: ID=220A Advanced trench process technology BV=75V Special designed for Convertors and power controls Rdson=2.7mΩ(typ.) High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF7504A is a new generation of middle voltage and high current N–Channel enhancem

1.4. ssf7504h.pdf Size:568K _silikron

SSF7504
SSF7504

 SSF7504H Main Product Characteristics: VDSS 75V RDS(on) 3.9mΩ(typ.) ID 220A ① Marking and p in TO- 247 Schematic diagram Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recover

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