SSF7609 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSF7609
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 200 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17 nS
Cossⓘ - Capacitancia de salida: 340 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET SSF7609
SSF7609 Datasheet (PDF)
ssf7609.pdf
SSF7609 Main Product Characteristics: VDSS 75V RDS(on) 7.3m(typ.) ID 80A TO220 Marking a nd pin Sche ma ti c di ag r a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
ssf7607.pdf
SSF7607 Main Product Characteristics: VDSS 75V RDS(on) 5.5m(typ.) ID 130A TO220 Marking a nd pin Sche ma ti c di ag r a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover
ssf7604.pdf
SSF7604 Main Product Characteristics: VDSS 75V RDS(on) 3.7m(typ.) ID 180A TO220 Marking a nd pin Sche ma ti c di ag r a m Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recover
ssf7610.pdf
SSF7610 Main Product Characteristics VDSS 75V RDS(on) 6.5m(typ.) ID 85A Marking a nd P in TO-220 Schematic Diagram Assignment Features and Benefits Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 17
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918