SSF7610 Todos los transistores

 

SSF7610 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SSF7610

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 300 W

Tensión drenaje-fuente (Vds): 75 V

Tensión compuerta-fuente (Vgs): 25 V

Corriente continua de drenaje (Id): 85 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 80 nC

Tiempo de elevación (tr): 20 nS

Conductancia de drenaje-sustrato (Cd): 452 pF

Resistencia drenaje-fuente RDS(on): 0.01 Ohm

Empaquetado / Estuche: TO220

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SSF7610 Datasheet (PDF)

1.1. ssf7610.pdf Size:471K _silikron

SSF7610
SSF7610

 SSF7610 Main Product Characteristics VDSS 75V RDS(on) 6.5mΩ(typ.) ID 85A Marking a nd P in TO-220 Schematic Diagram Assignment Features and Benefits  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  17

5.1. ssf7607.pdf Size:509K _silikron

SSF7610
SSF7610

 SSF7607 Main Product Characteristics: VDSS 75V RDS(on) 5.5mΩ(typ.) ID 130A ① TO220 Marking a nd pin Sche ma ti c di ag r a m Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recover

5.2. ssf7609.pdf Size:610K _silikron

SSF7610
SSF7610

 SSF7609 Main Product Characteristics: VDSS 75V RDS(on) 7.3mΩ(typ.) ID 80A ① TO220 Marking a nd pin Sche ma ti c di ag r a m Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery

 5.3. ssf7604.pdf Size:529K _silikron

SSF7610
SSF7610

 SSF7604 Main Product Characteristics: VDSS 75V RDS(on) 3.7mΩ(typ.) ID 180A ① TO220 Marking a nd pin Sche ma ti c di ag r a m Assignment Features and Benefits:  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recover

Otros transistores... NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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Recientemente añadidas las descripciónes de los transistores:

MOSFET: RJL6013DPP | RJL6012DPP | RJL5014DPP | RJL5013DPP | RJL5012DPP | RJK6036DP3-A0 | RJK6032DPH-E0 | RJK6025DPH-E0 | RJK6024DP3-A0 | RJK6013DPP-E0 | RJK6002DPH-E0 | RJK6002DJE | RJK5032DPH-E0 | RJK5032DPD | RJK5014DPP-E0 |

 

 

 
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