SSPL6022 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSPL6022
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 130 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 50 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Tiempo de subida (tr): 82 nS
Conductancia de drenaje-sustrato (Cd): 308 pF
Resistencia entre drenaje y fuente RDS(on): 0.023 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET SSPL6022
SSPL6022 Datasheet (PDF)
sspl6022.pdf
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SSPL6022 Main Product Characteristics: VDSS 60V RDS(on) 20mohm(typ.) ID 50A Mar ki ng a nd p in TO220 Sche ma ti c di agr a m Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
sspl6005.pdf
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SSPL6005 Main Product Characteristics: VDSS 60V RDS(on) 4.9mohm(typ.) ID 160A Mar ki ng a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove
sspl6040.pdf
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SSPL6040 Main Product Characteristics: VDSS 60V RDS(on) 34m (typ.) ID 38A TO-220 Mar ki ng a nd p in Sche mati c di agra m Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 17
sspl6040d.pdf
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SSPL6040D Main Product Characteristics: VDSS 60V RDS(on) 34m (typ.) ID 33A TO-252 (D-PAK) Marking a nd p in S c he mati c di agram Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
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