SSPL1090 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSPL1090
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 70 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 17 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.54 V
Tiempo de subida (tr): 21.4 nS
Conductancia de drenaje-sustrato (Cd): 108 pF
Resistencia entre drenaje y fuente RDS(on): 0.09 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET SSPL1090
SSPL1090 Datasheet (PDF)
sspl1090.pdf
SSPL1090 Main Product Characteristics: VDSS 100V RDS(on) 75m (typ.) ID 17A Mar ki ng a nd p in TO-220 Sche ma ti c di agr a m Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
sspl1022.pdf
SSPL1022Main Product Characteristics: VDSS 100V RDS(on) 21mohm(typ.)ID 57AMarking and pin TO220Schematic diagramAssignmentFeatures and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 operating te
sspl1042.pdf
SSPL1042 Main Product Characteristics: VDSS 100V RDS(on) 33mohm(typ.) ID 33A Mar ki ng a nd p in TO220 Sche ma ti c di agr a m Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
sspl1010.pdf
SSPL1010 Main Product Characteristics: VDSS 100V RDS(on) 8.9mohm(typ.) ID 88A Mar ki ng a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove
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