SSPL2015 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSPL2015
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 150 W
Voltaje máximo drenador - fuente |Vds|: 200 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 18 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.26 V
Tiempo de subida (tr): 25.5 nS
Conductancia de drenaje-sustrato (Cd): 232 pF
Resistencia entre drenaje y fuente RDS(on): 0.15 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET SSPL2015
SSPL2015 Datasheet (PDF)
sspl2015.pdf
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SSPL2015 Main Product Characteristics: VDSS 200V RDS(on) 0.13ohm(typ.) ID 18A Mar ki ng a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
sspl2015f.pdf
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SSPL2015F Main Product Characteristics VDSS 200V RDS(on) 0.13(typ.) ID 18A Marking and P in Schematic Diagram TO-220F Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 17
sspl2015d.pdf
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SSPL2015D Main Product Characteristics VDSS 200V RDS(on) 0.13(typ.) ID 18A Schematic Diagram TO-252 Marking a nd P in Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery Descri
sspl2090.pdf
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SSPL2090 Main Product Characteristics: VDSS 200V RDS(on) 80m(typ.) ID 30A Ma r ki ng a nd pin Sche ma ti c di agra m TO220 Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery
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