SSPL50N30H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SSPL50N30H
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 390 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 300 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 165 nS
Cossⓘ - Capacitancia de salida: 725 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
Paquete / Cubierta: TO247
- Selección de transistores por parámetros
SSPL50N30H Datasheet (PDF)
sspl50n30h.pdf

SSPL50N30H Main Product Characteristics: VDSS 300V RDS(on) 45m(typ.) ID 50A Marking and P in TO- 247 Schematic Diagram Assignment Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove
sspl5508.pdf

SSPL5508 Main Product Characteristics VDSS 55V RDS(on) 7.2m(typ.) ID 110A Schematic Diagram TO-220 Marking a nd P in Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175
sspl5505.pdf

SSPL5505 Main Product Characteristics: VDSS 55V RDS(on) 4.5mohm(typ.) ID 160A Mar ki ng a nd p in Sche ma ti c di agr a m TO220 Assignment Features and Benefits: Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recove
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: NTB6410AN | SDF1NA60



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