MMFTN170 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MMFTN170
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 0.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 0.4 nC
   Cossⓘ - Capacitancia de salida: 30 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
   Paquete / Cubierta: TO236

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MMFTN170 Datasheet (PDF)

..1. Size:114K semtech
mmftn170.pdf

MMFTN170 N-Channel Enhancement Mode Field Effect Transistor Feature Voltage controlled small signal switch Drain High saturation current capability Gate1. Gate 2. Source 3. DrainSource TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitDrain-Source Voltage VDSS 60 VDrain-Gate Voltage (RGS 1 M) VDGR 60 VV Gate-Source

..2. Size:889K cn vbsemi
mmftn170.pdf

MMFTN170www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG 1

8.1. Size:154K semtech
mmftn138.pdf

MMFTN138 N-Channel Logic Level Enhancement Mode Field Effect Transistor for low voltage, low current switching applications 1. Gate 2. Source 3. DrainTO-236 Plastic Package DrainGateSourceOAbsolute Maximum Ratings (Ta = 25 C unless otherwise specified) Parameter Symbol Value UnitDrain-Source Voltage VDSS 50 VDrain-Gate Voltage (RGS 20 K) VDGR 50 VGate-Source

8.2. Size:910K semtech
mmftn138w.pdf

MMFTN138W N-Channel Logic Level Enhancement Mode Field Effect Transistor for low voltage, low current switching applications 1. Gate 2. Source 3. DrainSOT-323 Plastic Package DrainGateSourceAbsolute Maximum Ratings (Ta = 25 unless otherwise specified) Parameter Symbol Value UnitDrain-Source Voltage VDSS 50 VDrain-Gate Voltage (RGS 20 K) VDGR 50 VGate-Source V

8.3. Size:153K semtech
mmftn123.pdf

MMFTN123 N-Channel Logic Level Enhancement Mode Field Effect Transistor 1. Gate 2. Source 3. DrainTO-236 Plastic PackageDrainGateSourceOAbsolute Maximum Ratings (Ta = 25 C unless otherwise specified) Parameter Symbol Value UnitDrain-Source Voltage VDSS 100 VGate-Source Voltage VGSS 20 VDrain Current ID 170 mAPeak Drain Current IDM 680 mATotal Power Dissipation P

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: MMN3400 | DN2625

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