MMFTN170 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMFTN170
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 0.3 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 0.5 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 0.4 nC
Conductancia de drenaje-sustrato (Cd): 30 pF
Resistencia entre drenaje y fuente RDS(on): 5 Ohm
Paquete / Cubierta: TO236
Búsqueda de reemplazo de MOSFET MMFTN170
MMFTN170 Datasheet (PDF)
mmftn170.pdf
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MMFTN170 N-Channel Enhancement Mode Field Effect Transistor Feature Voltage controlled small signal switch Drain High saturation current capability Gate1. Gate 2. Source 3. DrainSource TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitDrain-Source Voltage VDSS 60 VDrain-Gate Voltage (RGS 1 M) VDGR 60 VV Gate-Source
mmftn170.pdf
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MMFTN170www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD ProtectionG 1
mmftn138.pdf
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MMFTN138 N-Channel Logic Level Enhancement Mode Field Effect Transistor for low voltage, low current switching applications 1. Gate 2. Source 3. DrainTO-236 Plastic Package DrainGateSourceOAbsolute Maximum Ratings (Ta = 25 C unless otherwise specified) Parameter Symbol Value UnitDrain-Source Voltage VDSS 50 VDrain-Gate Voltage (RGS 20 K) VDGR 50 VGate-Source
mmftn138w.pdf
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MMFTN138W N-Channel Logic Level Enhancement Mode Field Effect Transistor for low voltage, low current switching applications 1. Gate 2. Source 3. DrainSOT-323 Plastic Package DrainGateSourceAbsolute Maximum Ratings (Ta = 25 unless otherwise specified) Parameter Symbol Value UnitDrain-Source Voltage VDSS 50 VDrain-Gate Voltage (RGS 20 K) VDGR 50 VGate-Source V
mmftn123.pdf
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MMFTN123 N-Channel Logic Level Enhancement Mode Field Effect Transistor 1. Gate 2. Source 3. DrainTO-236 Plastic PackageDrainGateSourceOAbsolute Maximum Ratings (Ta = 25 C unless otherwise specified) Parameter Symbol Value UnitDrain-Source Voltage VDSS 100 VGate-Source Voltage VGSS 20 VDrain Current ID 170 mAPeak Drain Current IDM 680 mATotal Power Dissipation P
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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