FTD02N60C Todos los transistores

 

FTD02N60C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FTD02N60C
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 70 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 20 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.4 Ohm
   Paquete / Cubierta: TO252

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FTD02N60C Datasheet (PDF)

 ..1. Size:254K  inpower semi
ftd02n60c ftu02n60c.pdf

FTD02N60C
FTD02N60C

FTD02N60CFTU02N60CN-Channel MOSFET PbLead Free Package and FinishApplications:VDSS RDS(ON) (Max.) ID Adaptor TV Main Power600 V 4.4 2 A SMPS Power Supply LCD Panel Power DFeatures: RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width CurveG GGOrdering InformationDSDS TO-251TO-252 SPART NUMBER PAC

 6.1. Size:533K  ark-micro
ftu02n60b ftd02n60b.pdf

FTD02N60C
FTD02N60C

FTU02N60B/FTD02N60B 600V N-Channel MOSFET BVDSS RDS(ON) (Max.) ID General Features Low ON Resistance 600V 5.5 1.9A Low Gate Charge (typical 7.4nC) Fast Switching 100% Avalanche Tested RoHS Compliant Halogen-free available Applications High Efficiency SMPS Adaptor/Charger Active PFC LCD Panel Power Ordering Information

 8.1. Size:562K  ark-micro
ftu02n70 ftd02n70.pdf

FTD02N60C
FTD02N60C

FTU02N70/FTD02N70 700V N-Channel MOSFET General Features BVDSS RDS(ON) (Max.) ID Low ON Resistance Low Gate Charge 700V 6.5 1.8A Fast Switching 100% Avalanche Tested RoHS Compliant Halogen-free available Applications High Efficiency SMPS Adaptor/Charger Active PFC LCD Panel Power Ordering Information Part Number Packag

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