L2N600 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: L2N600
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 60 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 50 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 5 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET L2N600
L2N600 Datasheet (PDF)
l2n600.pdf
LESHAN RADIO COMPANY, LTD.600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS(ON), Vgs@10V, Ids@1A = 3.8 We declare that the material of productcompliance with RoHS requirements.1/5LESHAN RADIO COMPANY, LTD.L2N600Electrical Characteristics Tc = 25 C unless otherwise notedParameter Symbol Test Condition Min Typ Max UnitOff CharacteristicsDrain-Source Breakdown Voltage
brl2n60.pdf
BRL2N60(CS2N60L) N-CHANNEL MOSFET/N MOS : DC/DC Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. : ,, Features: Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25
l2n60d l2n60f l2n60i l2n60p.pdf
LESHAN RADIO COMPANY, LTD.L2N60600V N-Channel MOSFET 2 DESCRIPTION 1 3
bl2n60-p bl2n60-a bl2n60-u bl2n60-d.pdf
BL2N60 Power MOSFET 1Description Step-Down Converter BL2N60, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Para
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