L2N600 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

L2N600 datasheet

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LESHAN RADIO COMPANY, LTD. 600V N-Channel Enhancement-Mode MOSFET VDS= 600V RDS(ON), Vgs@10V, Ids@1A = 3.8 We declare that the material of product compliance with RoHS requirements. 1/5 LESHAN RADIO COMPANY, LTD. L2N600 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage

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BRL2N60(CS2N60L) N-CHANNEL MOSFET/N MOS DC/DC Purpose These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. , , Features Low gate charge, low crss, fast switching. /Absolute maximum ratings(Ta=25

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LESHAN RADIO COMPANY, LTD. L2N60 600V N-Channel MOSFET 2 DESCRIPTION 1 3

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BL2N60 Power MOSFET 1 Description Step-Down Converter BL2N60, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Para

Otros transistores... FTP10N60C , FTA10N60C , FTP11N08 , FTP18N06 , FTP18N06N , FTP22N06B , FTU01N60C , L1N60 , TK10A60D , L4N60 , L75N75 , LIRFZ44N , SPI80N03S2-03 , SPP80N03S2-03 , SPB80N03S2-03 , STP80NF70 , CL616BA .