P0260AI MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

P0260AI datasheet

..1. Size:413K unikc
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P0260AI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 4.6 @VGS = 10V 600V 2A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 2 ID Continuous Drain Current2 TC = 100 C 1.3 A IDM 7 Pulsed Drain Current1

8.1. Size:334K unikc
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P0260AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 4.4 @VGS = 10V 2.8A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 30 V TC = 25 C 2.8 ID Continuous Drain Current2 TC = 100 A C 1.8 IDM 3.5 Pulsed Drain Current1 EAS Avalanche Energy 5 mJ

8.2. Size:545K unikc
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P0260ATF / P0260ATFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 600V 4.4 @VGS = 10V 2A TO-220F TO-220FS 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage 30 TC = 25 C 2 ID Continuous Drain Current2 TC = 100 A

8.3. Size:418K unikc
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