P0403BD Todos los transistores

 

P0403BD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: P0403BD

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 51 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 81 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 20 nS

Cossⓘ - Capacitancia de salida: 469 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0043 Ohm

Encapsulados: TO252

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P0403BD datasheet

 ..1. Size:439K  unikc
 p0403bd.pdf pdf_icon

P0403BD

P0403BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 4.3m @VGS = 10V 30V 81A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 81 ID Continuous Drain Current TC = 100 C 51 A IDM 200 Pulsed Drain Current

 0.1. Size:417K  unikc
 p0403bda.pdf pdf_icon

P0403BD

P0403BDA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 4.6m @VGS = 10V 30V 77A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC= 25 C 77 ID Continuous Drain Current2 TC= 100 C 50 A IDM 200 Pulsed Drain Current

 0.2. Size:524K  unikc
 p0403bdg.pdf pdf_icon

P0403BD

P0403BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 4m @VGS = 10V 25V 84A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage 20 TC= 25 C 84 ID Continuous Drain Current TC= 100 C 67 A IDM 200 Pulsed Drain Current1

 8.1. Size:367K  unikc
 p0403bv.pdf pdf_icon

P0403BD

P0403BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 4.5m @VGS = 10V 18A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TA = 25 C 18 ID Continuous Drain Current TA = 70 C 15 A IDM 70 Pulsed Drain Current1

MOSTRAR MÁS

Otros transistores... P0260EIS , P0260ETF , P0270ATF , P0270ATFS , P0303BD , P0303BKA , P0303BV , P0320AL , IRFZ48N , P0403BDA , P0403BDG , P0403BT , P0403BV , P0403BVG , P0420AD , P0420AI , P0425AD .

History: FDS8880 | KMB7D1DP30QA | KMB080N75PA

 

 

 

 

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