P0403BDA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: P0403BDA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 50 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 77 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 57 nC
Tiempo de subida (tr): 20 nS
Conductancia de drenaje-sustrato (Cd): 456 pF
Resistencia entre drenaje y fuente RDS(on): 0.0046 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET P0403BDA
P0403BDA Datasheet (PDF)
p0403bda.pdf
P0403BDAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID4.6m @VGS = 10V30V 77ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC= 25 C77IDContinuous Drain Current2TC= 100 C50AIDM200Pulsed Drain Current
p0403bd.pdf
P0403BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID4.3m @VGS = 10V30V 81ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC = 25 C81IDContinuous Drain CurrentTC = 100 C51AIDM200Pulsed Drain Current
p0403bdg.pdf
P0403BDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID4m @VGS = 10V25V 84ATO-252ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 25VVGSGate-Source Voltage 20TC= 25 C84IDContinuous Drain CurrentTC= 100 C67AIDM200Pulsed Drain Current1
p0403bv.pdf
P0403BVN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30V 4.5m @VGS = 10V 18ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TA = 25 C18IDContinuous Drain CurrentTA = 70 C15AIDM70Pulsed Drain Current1
p0403bt.pdf
P0403BTN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30V 4m @VGS = 10V 112ATO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C112IDContinuous Drain Current2TC = 100 C71AIDM200Pulsed Drain Current1IASAvalanche Current 44
p0403bvg.pdf
P0403BVGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID4.5m @VGS = 10V30V 18ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 30VVGSGate-Source Voltage 20TA = 25 C18IDContinuous Drain CurrentTA = 70 C15AIDM80Pulsed Drain Current1
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
