P0403BT Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: P0403BT  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 83 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 112 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 36 nS

Cossⓘ - Capacitancia de salida: 979 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm

Encapsulados: TO220

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P0403BT datasheet

 ..1. Size:348K  unikc
 p0403bt.pdf pdf_icon

P0403BT

P0403BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 4m @VGS = 10V 112A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 112 ID Continuous Drain Current2 TC = 100 C 71 A IDM 200 Pulsed Drain Current1 IAS Avalanche Current 44

 8.1. Size:367K  unikc
 p0403bv.pdf pdf_icon

P0403BT

P0403BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 4.5m @VGS = 10V 18A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TA = 25 C 18 ID Continuous Drain Current TA = 70 C 15 A IDM 70 Pulsed Drain Current1

 8.2. Size:417K  unikc
 p0403bda.pdf pdf_icon

P0403BT

P0403BDA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 4.6m @VGS = 10V 30V 77A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC= 25 C 77 ID Continuous Drain Current2 TC= 100 C 50 A IDM 200 Pulsed Drain Current

 8.3. Size:439K  unikc
 p0403bd.pdf pdf_icon

P0403BT

P0403BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 4.3m @VGS = 10V 30V 81A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 81 ID Continuous Drain Current TC = 100 C 51 A IDM 200 Pulsed Drain Current

MOSTRAR MÁS

Otros transistores... P0270ATFS, P0303BD, P0303BKA, P0303BV, P0320AL, P0403BD, P0403BDA, P0403BDG, IRFB31N20D, P0403BV, P0403BVG, P0420AD, P0420AI, P0425AD, P0425AI, P7004EM, P7004EV