P0403BT Todos los transistores

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P0403BT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: P0403BT

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 83 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 112 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 36 nS

Conductancia de drenaje-sustrato (Cd): 979 pF

Resistencia drenaje-fuente RDS(on): 0.007 Ohm

Empaquetado / Estuche: TO220

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P0403BT Datasheet (PDF)

1.1. p0403bt.pdf Size:348K _unikc

P0403BT
P0403BT

P0403BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 4mΩ @VGS = 10V 112A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage ±20 V TC = 25 ° C 112 ID Continuous Drain Current2 TC = 100 ° C 71 A IDM 200 Pulsed Drain Current1 IAS Avalanche Current 44

4.1. p0403bdg.pdf Size:524K _unikc

P0403BT
P0403BT

P0403BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 4mΩ @VGS = 10V 25V 84A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage ±20 TC= 25 ° C 84 ID Continuous Drain Current TC= 100 ° C 67 A IDM 200 Pulsed Drain Current1

4.2. p0403bv.pdf Size:367K _unikc

P0403BT
P0403BT

P0403BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 4.5mΩ @VGS = 10V 18A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 TA = 25 ° C 18 ID Continuous Drain Current TA = 70 ° C 15 A IDM 70 Pulsed Drain Current1

4.3. p0403bda.pdf Size:417K _unikc

P0403BT
P0403BT

P0403BDA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 4.6mΩ @VGS = 10V 30V 77A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 TC= 25 ° C 77 ID Continuous Drain Current2 TC= 100 ° C 50 A IDM 200 Pulsed Drain Current

4.4. p0403bd.pdf Size:439K _unikc

P0403BT
P0403BT

P0403BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 4.3mΩ @VGS = 10V 30V 81A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 TC = 25 ° C 81 ID Continuous Drain Current TC = 100 ° C 51 A IDM 200 Pulsed Drain Current

4.5. p0403bvg.pdf Size:505K _unikc

P0403BT
P0403BT

P0403BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 4.5mΩ @VGS = 10V 30V 18A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V VGS Gate-Source Voltage ±20 TA = 25 ° C 18 ID Continuous Drain Current TA = 70 ° C 15 A IDM 80 Pulsed Drain Current1

Otros transistores... P0270ATFS , P0303BD , P0303BKA , P0303BV , P0320AL , P0403BD , P0403BDA , P0403BDG , APT50M38JLL , P0403BV , P0403BVG , P0420AD , P0420AI , P0425AD , P0425AI , P7004EM , P7004EV .

 


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