P0403BT Todos los transistores

 

P0403BT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: P0403BT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 112 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 36 nS
   Cossⓘ - Capacitancia de salida: 979 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: TO220
 
   - Selección ⓘ de transistores por parámetros

 

P0403BT Datasheet (PDF)

 ..1. Size:348K  unikc
 p0403bt.pdf pdf_icon

P0403BT

P0403BTN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30V 4m @VGS = 10V 112ATO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C112IDContinuous Drain Current2TC = 100 C71AIDM200Pulsed Drain Current1IASAvalanche Current 44

 8.1. Size:367K  unikc
 p0403bv.pdf pdf_icon

P0403BT

P0403BVN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID30V 4.5m @VGS = 10V 18ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TA = 25 C18IDContinuous Drain CurrentTA = 70 C15AIDM70Pulsed Drain Current1

 8.2. Size:417K  unikc
 p0403bda.pdf pdf_icon

P0403BT

P0403BDAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID4.6m @VGS = 10V30V 77ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC= 25 C77IDContinuous Drain Current2TC= 100 C50AIDM200Pulsed Drain Current

 8.3. Size:439K  unikc
 p0403bd.pdf pdf_icon

P0403BT

P0403BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID4.3m @VGS = 10V30V 81ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30VVGSGate-Source Voltage 20TC = 25 C81IDContinuous Drain CurrentTC = 100 C51AIDM200Pulsed Drain Current

MOSTRAR MÁS

Otros transistores... P0270ATFS , P0303BD , P0303BKA , P0303BV , P0320AL , P0403BD , P0403BDA , P0403BDG , 60N06 , P0403BV , P0403BVG , P0420AD , P0420AI , P0425AD , P0425AI , P7004EM , P7004EV .

History: FDC6392S | IRFI9630GPBF

 

 
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