P0403BV Todos los transistores

 ..1. Size:367K  unikc
 p0403bv.pdf

P0403BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 4.5m @VGS = 10V 18A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TA = 25 C 18 ID Continuous Drain Current TA = 70 C 15 A IDM 70 Pulsed Drain Current1

 0.1. Size:505K  unikc
 p0403bvg.pdf

P0403BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 4.5m @VGS = 10V 30V 18A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V VGS Gate-Source Voltage 20 TA = 25 C 18 ID Continuous Drain Current TA = 70 C 15 A IDM 80 Pulsed Drain Current1

 8.1. Size:417K  unikc
 p0403bda.pdf

P0403BDA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 4.6m @VGS = 10V 30V 77A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC= 25 C 77 ID Continuous Drain Current2 TC= 100 C 50 A IDM 200 Pulsed Drain Current

 8.2. Size:439K  unikc
 p0403bd.pdf

P0403BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 4.3m @VGS = 10V 30V 81A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 81 ID Continuous Drain Current TC = 100 C 51 A IDM 200 Pulsed Drain Current

 8.3. Size:348K  unikc
 p0403bt.pdf

P0403BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 30V 4m @VGS = 10V 112A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 112 ID Continuous Drain Current2 TC = 100 C 71 A IDM 200 Pulsed Drain Current1 IAS Avalanche Current 44

 8.4. Size:524K  unikc
 p0403bdg.pdf

P0403BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 4m @VGS = 10V 25V 84A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage 20 TC= 25 C 84 ID Continuous Drain Current TC= 100 C 67 A IDM 200 Pulsed Drain Current1