P4506BD Todos los transistores

 ..1. Size:482K  unikc
 p4506bd.pdf

P4506BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 45m @VGS = 10V 60V 22A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 20 TC = 25 C 22 ID Continuous Drain Current TC = 100 A C 18 IDM 80 Pulsed Drain Current1

 8.1. Size:501K  unikc
 p4506bv.pdf

P4506BV N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 45m @VGS = 10V 60V 5.5A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C 5.5 ID Continuous Drain Current TA = 70 C 4.5 A IDM 30 Pulsed Drain Current1 IAS Avalanche Cu

 9.1. Size:130K  toshiba
 mp4506.pdf

MP4506 TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) MP4506 Industrial Applications High Power Switching Applications. Unit mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Package with heat sink isolated to lead (SIP 12 pin) High collector power dissipation (4 devices operation) P = 5 W (Ta =

 9.2. Size:116K  ape
 ap4506geh-hf.pdf

AP4506GEH-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30V D1/D2 Good Thermal Performance RDS(ON) 24m Fast Switching Performance ID 9A S1 G1 S2 RoHS Compliant P-CH BVDSS -30V G2 RDS(ON) 36m TO-252-4L Description ID -8A Advanced Power MOSFETs from APEC provide the de

 9.3. Size:197K  ape
 ap4506gem.pdf

AP4506GEM-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D2 N-CH BVDSS 30V Simple Drive Requirement D2 D1 RDS(ON) 30m Low On-resistance D1 ID 6.4A Fast Switching Performance G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30V G1 SO-8 S1 RDS(ON

 9.4. Size:117K  ape
 ap4506gem-hf.pdf

AP4506GEM-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement D2 N-CH BVDSS 30V D2 D1 Low On-resistance RDS(ON) 30m D1 Fast Switching Performance ID 6.4A G2 S2 RoHS Compliant P-CH BVDSS -30V G1 SO-8 S1 RDS(ON) 40m Description ID -6A Advanced Power MOSFETs from APEC provide the desi

 9.5. Size:119K  ape
 ap4506geh.pdf

AP4506GEH RoHS-compliant Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30V D1/D2 Good Thermal Performance RDS(ON) 24m Fast Switching Performance ID 9A S1 G1 S2 P-CH BVDSS -30V G2 RDS(ON) 36m TO-252-4L Description ID -8A Advanced Power MOSFETs from APEC provide the designer with the best