P4506BD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

P4506BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID45m @VGS = 10V60V 22ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 20TC = 25 C22IDContinuous Drain CurrentTC = 100 AC18IDM80Pulsed Drain Current1

P4506BVN-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID45m @VGS = 10V60V 5.5ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C5.5IDContinuous Drain CurrentTA = 70 C4.5AIDM30Pulsed Drain Current1IASAvalanche Cu

MP4506 TOSHIBA Power Transistor Module Silicon NPN Triple Diffused Type (Darlington power transistor 4 in 1) MP4506 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Package with heat sink isolated to lead (SIP 12 pin) High collector power dissipation (4 devices operation) : P = 5 W (Ta =

AP4506GEH-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD1/D2 Good Thermal Performance RDS(ON) 24m Fast Switching Performance ID 9AS1G1S2 RoHS Compliant P-CH BVDSS -30VG2RDS(ON) 36mTO-252-4LDescription ID -8AAdvanced Power MOSFETs from APEC provide thede

AP4506GEM-HFHalogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D2 N-CH BVDSS 30V Simple Drive Requirement D2D1 RDS(ON) 30m Low On-resistance D1 ID 6.4A Fast Switching Performance G2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -30VG1SO-8 S1RDS(ON

AP4506GEM-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement D2 N-CH BVDSS 30VD2D1 Low On-resistance RDS(ON) 30mD1 Fast Switching Performance ID 6.4AG2S2 RoHS Compliant P-CH BVDSS -30VG1SO-8 S1RDS(ON) 40mDescription ID -6AAdvanced Power MOSFETs from APEC provide thedesi

AP4506GEHRoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 30VD1/D2 Good Thermal Performance RDS(ON) 24m Fast Switching Performance ID 9AS1G1S2P-CH BVDSS -30VG2RDS(ON) 36mTO-252-4LDescription ID -8AAdvanced Power MOSFETs from APEC provide thedesigner with the best