P0465AD Todos los transistores

 ..1. Size:544K  unikc
 p0465ad.pdf

 8.1. Size:515K  unikc
 p0465atf-s.pdf

P0465ATF / P0465ATFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.5 @VGS = 10V 650V 4A TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage 30 TC = 25 C 4 ID Continuous Drain Current2 TC = 100 A C 2.2 IDM

 9.1. Size:422K  unikc
 p0465cd.pdf

P0465CD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.6 @VGS = 10V 650V 4A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage 30 V TC= 25 C 4 ID Continuous Drain Current2 TC= 100 C 2.5 A IDM 15 Pulsed Drain Current1

 9.2. Size:428K  unikc
 p0465cs.pdf

P0465CS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.6m @VGS = 10V 650V 4A TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage 30 V TC= 25 C 4 ID Continuous Drain Current TC= 100 C 2.5 A IDM 15 Pulsed Drain Current1

 9.3. Size:434K  unikc
 p0465ct.pdf

P0465CT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.6m @VGS = 10V 650V 4A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage 30 V TC= 25 C 4 ID Continuous Drain Current TC= 100 C 2.5 A IDM 15 Pulsed Drain Current1

 9.4. Size:789K  unikc
 p0465ctf-s.pdf

P0465CTF/P0465CTFS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.7 @VGS = 10V 650V 4A 100% UIS tested TO-220F TO-220FS ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage 30 TC = 25 C 4 ID Continuous Drain Current2 TC = 100 C

 9.5. Size:731K  unikc
 p0465cis.pdf

P0465CIS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.6 @VGS = 10V 650V 4A TO-251(IS) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage 30 V TC= 25 C 4 ID Continuous Drain Current2 TC= 100 C 2.5 A IDM 15 Pulsed Drain Cur

 9.6. Size:474K  unikc
 p0465ci.pdf

P0465CI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 2.6 @VGS = 10V 650V 4A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 650 V VGS Gate-Source Voltage 30 V TC= 25 C 4 ID Continuous Drain Current2 TC= 100 C 2.5 A IDM 15 Pulsed Drain Current1